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Part: STD1NA60
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: Old PRODUCT: Not Suitable For Design-in
Company: ST Microelectronics, Inc.
Datasheet: Download STD1NA60 datasheet File size : 3604 kB
Request For quote: Find where to buy STD1NA60
Datasheet text preview:
STD1NA60
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TY P E S T D 1N A 60
s s s s s
VD S S 6 00 V
R DS( o n ) <8
ID 1 .6 A
s
s
TYPICAL RDS(on) = 7.2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
IPAK TO-251 (Suffix "-1")
2
1
DPAK TO-252
(Suffix "T4")
3
APPLICATIONS s HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT s PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DG R V GS ID ID I D M ( ·) Ptot Ts tg Tj P ar am et e r D r ai n - s ou r c e Voltage (V GS = 0) D r ai n - gate Voltage (R GS = 20 k) G a t e - s ou r c e Voltage D r ai n Current (continuous) at T c = 25 o C D r ai n Current (continuous) at T c = 100 C D r ai n Current (pulsed) T ot al Dissipation at T c = 25 C D er a ti n g Factor S t or a ge Temperature M a x . Operating Junction Temperature
o o
V a lue 6 00 6 00 ± 30 1 .6 1 6 .4 40 0. 32 - 6 5 to 150 1 50
U ni t V V V A A A W W /o C
o o
C C
(·) Pulse width limited by safe operating area
November 1996
1/10
STD1NA60
THERMAL DATA
R th j-c a s e R t h j - a mb R t h j - a mb Tl T he r ma l Resistance Junction-case T he r ma l Resistance Junction-ambient T he r ma l Resistance Case-sink M a x im u m Lead Temperature For Soldering Purpose Max Max Typ 3.12 10 0 1. 5 27 5
o o
C/ W C/ W o C/ W o C
AVALANCHE CHARACTERISTICS
S ym b o l IA R E AS E AR IA R P a ra m e t er A v a la nc h e Current, Repetitive or Not-Repetitive ( p ul s e width limited by T j max, < 1%) S i ng l e Pulse Avalanche Energy ( s t ar t i ng T j = 25 o C , I D = I A R , V D D = 50 V) R ep et i ti v e Avalanche Energy ( p ul s e width limited by T j max, < 1%) A v a la nc h e Current, Repetitive or Not-Repetitive ( T c = 100 o C , pulse width limited by T j max, < 1%) M ax Value 1. 6 13 0. 5 1 U ni t A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
S ym b o l V( B R ) D S S I DS S IG SS P ar am et e r D r ai n - s ou r c e B r e ak d ow n Voltage T e st Conditions I D = 250 µA VG S = 0 Mi n . 6 00 25 2 50 ± 100 Ty p. M a x. U ni t V µA µA nA
Z er o Gate Voltage V D S = Max Rating D r ai n Current (V GS = 0) V D S = Max Rating x 0.8 G a te - bo dy Leakage C ur r e nt (V D S = 0) V G S = ± 30 V
T c = 125 o C
ON ()
S ym b o l V G S(th ) R DS( o n ) I D( o n ) P ar am et e r G a t e Threshold Voltage V D S = V GS S t at ic Drain-source On R es i s t an c e V G S = 10V T e st Conditions I D = 250 µA ID = 1 A 1 Mi n . 2. 25 Ty p. 3 7 .2 M a x. 3. 75 8 U ni t V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) ma x V G S = 10 V
DYNAMIC
S ym b o l gf s () Ci s s C o ss C rs s P ar am et e r F or w ar d T r an s c on du c ta nc e I np ut Capacitance O u t p ut Capacitance R ev e r s e Transfer C ap ac i t an c e T e st Conditions V D S > I D ( o n ) x R D S ( o n ) ma x V D S = 25 V f = 1 MHz ID = 1 A VG S = 0 Mi n . 0. 65 Ty p. 1 .2 2 30 42 10 3 00 55 15 M a x. U ni t S pF pF pF
2/10
STD1NA60
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S ym b o l t d (o n ) tr ( di /d t) o n P ar am et e r T ur n - on Time R i s e Time T ur n - on Current Slope T e st Conditions V D D = 300 V I D = 1 A R G = 4.7 V GS = 10 V ( s e e test circuit, figure 3) V D D = 480 V I D = 2 A R G = 47 VG S = 10 V ( s e e test circuit, figure 5) V D D = 480 V ID = 2 A V G S = 10 V Mi n . Ty p. 8 13 1 80 M a x. 12 20 U ni t ns ns A/ µs
Qg Qgs Qgd
T ot al Gate Charge G a te - S ou r c e Charge G a t e - D r a i n Charge
15 5 6
25
nC nC nC
SWITCHING OFF
S ym b o l t r(Vo f f) tf tc P ar am et e r O f f - v o l t a ge Rise Time F al l Time C r os s - o v er Time T e st Conditions V D D = 480 V I D = 2 A R G = 4.7 V GS = 10 V ( s e e test circuit, figure 5) Mi n . Ty p. 8 15 8 M a x. 12 25 12 U ni t ns ns ns
SOURCE DRAIN DIODE
S ym b o l IS D I SDM ( · ) VS D () trr Qr r IR RM P ar am et e r S o ur c e - dr a in Current S o ur c e - dr a in Current ( p ul s e d) F or w ar d On Voltage R ev e r s e Recovery T im e R ev e r s e Recovery C ha r ge R ev e r s e Recovery C ur r e nt I S D = 1.6 A V GS = 0 4 00 4 20 I S D = 2 A di/dt = 100 A/µs V D D = 100 V T j = 150 o C ( s e e test circuit, figure 5) T e st Conditions Mi n . Ty p. M a x. 1 .6 6 .4 1 .6 U ni t A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
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