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Part: STD1NB50-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 500V -7.5 Ohm -1.4A Ipak Powermesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD1NB50-1 datasheet File size : 3604 kB
Request For quote: Find where to buy STD1NB50-1
Datasheet text preview:
®
STD1NB50
N - CHANNEL 500V - 7.5 - 1.4A IPAK PowerMESHTM MOSFET
TYPE S T D 1 N B5 0
s s s s s s
V DS S 50 0 V
R DS ( on ) <9
ID 1.4 A
TYPICAL RDS(on) = 7.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR SMD DPAK VERSION CONTACT SALES OFFICE IPAK TO-251 (Suffix "-1")
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S y mb o l V DS V DG R VGS ID ID I DM (· ) Ptot dv / d t (1 ) Ts t g Tj March 2000 P a r am e t er D r a in - s o ur c e Voltage (V G S = 0) D r a in - gate Voltage (R GS = 20 k) G a t e -s o u rc e Voltage D r a in Current (continuous) at T c = 25 o C D r a in Current (continuous) at T c = 100 C D r a in Current (pulsed) T o t a l Dissipation at T c = 25 o C D e r a ti n g Factor P e a k Diode Recovery voltage slope S t o ra g e Temperature M a x . Operating Junction Temperature
o
Va l u e 50 0 50 0 ± 36 1. 4 0. 9 1 5. 6 45 0. 3 6 3. 5 - 6 5 to 150 15 0
(1) ISD 1.4A, di/dt 150 A/µs, VDD V(BR)DSS, Tj TJMAX
U n it V V V A A A W W /o C V /n s
o o
C C 1/8
(·) Pulse width limited by safe operating area
STD1NB50
THERMAL DATA
R t h j - c a se
Rt hj -am b
R t h c - si n k Tl
T h e r m al Resistance Junction-case Max T h e r m al Resistance Junction-ambient Max T h e r m al Resistance Case-sink Typ M a x i m um Lead Temperature For Soldering Purpose
2.78 1 00 1. 5 2 75
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
S ym b o l IA R EAS P a ra m e t er A v a la n c h e Current, Repetitive or Not-Repetitive ( p u ls e width limited by T j max, < 1%) S i n gl e Pulse Avalanche Energy ( s t a rt i ng T j = 25 o C , I D = I A R , V D D = 50 V) M a x Value 1. 4 40 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
S ym b o l V (BR )D SS ID SS IG S S P a r am e t e r D r a in - s o ur c e B r e ak d o w n Voltage T e s t Conditions I D = 250 µA V GS = 0 Min. 500 1 50 ± 100 T yp . Max. U n it V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a in Current (V G S = 0) V D S = Max Rating G a t e -b o d y Leakage C u r re n t (V D S = 0) V GS = ± 30 V
T c = 125 o C
ON ()
S ym b o l V GS(t h) R D S(on) I D(o n) P a r am e t e r G a t e Threshold Voltage V D S = V G S S t a t ic Drain-source On R e s i s ta n c e V GS = 10V T e s t Conditions I D = 250 µA I D =0.5 A 1.4 Min. 2 T yp . 3 7. 5 Max. 4 9 U n it V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V GS = 10 V
DYNAMIC
S ym b o l g f s () C i ss C os s C r ss P a r am e t e r F o r w ar d T r a n sc o n d uc t a n c e I n p ut Capacitance O u t p ut Capacitance R e v e rs e Transfer C a p a c it a n ce T e s t Conditions V DS > I D(o n) x R D S (on )max V D S = 25 V f = 1 MHz I D = 0.7 A VG S = 0 Min. 0.45 T yp . 0. 7 15 0 24 2. 5 200 32 3.3 Max. U n it S pF pF pF
2/8
STD1NB50
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S ym b o l t d(on ) tr Qg Qgs Qgd P a r am e t e r T u r n -o n Time R i s e Time T o t a l Gate Charge G a t e -S o u rc e Charge G a t e -D r a in Charge T e s t Conditions V D D = 250 V I D = 0.7 A R G = 4.7 V GS = 10 V (s e e test circuit, figure 3) V D D = 400 V I D =1.4 A V GS = 10 V Min. T yp . 8 8 9 5. 5 2. 4 Max. 12 12 13 U n it ns ns nC nC nC
SWITCHING OFF
S ym b o l tr ( V o f f ) tf tc P a r am e t e r O f f - vo l t ag e Rise Time F a l l Time C r o s s -o v e r Time T e s t Conditions V D D = 400 V I D = 1.4 A R G = 4.7 VG S = 10 V (s e e test circuit, figure 5) Min. T yp . 20 22 30 Max. 28 31 42 U n it ns ns ns
SOURCE DRAIN DIODE
S ym b o l IS D I S DM (· ) V S D () t rr Q rr I R RM P a r am e t e r S o u rc e - d ra i n Current S o u rc e - d ra i n Current ( p u ls e d ) F o r w ar d On Voltage R e v e rs e Recovery Time R e v e rs e Recovery C h a r ge R e v e rs e Recovery C u r re n t I S D = 1.4 A VGS = 0 33 0 78 0 4. 7 I S D = 1.4 A di/dt = 100 A/µs V D D = 100 V T j = 150 o C (s e e test circuit, figure 5) T e s t Conditions Min. T yp . Max. 1.4 5.6 1.6 U n it A A V ns nC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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