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Part: STD1NB60-1/T4
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 600V - 7.4 Ohm - 1A - Ipak/dpak Powermesh MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD1NB60-1/T4 datasheet File size : 3604 kB
Request For quote: Find where to buy STD1NB60-1/T4
Datasheet text preview:
®
STD1NB60
N - CHANNEL 600V - 7.4 - 1A - IPAK/DPAK PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE STD1NB60
s s s s s
V DS S 60 0 V
R DS ( on ) < 8.5
ID 1A
TYPICAL RDS(on) = 7.4 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
IPAK TO-251 (Suffix "-1")
DPAK TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l V DS V DG R VGS ID ID I DM (· ) Ptot dv/dt(1) Ts t g Tj Parameter D r a i n - so u rc e Voltage (V G S = 0) D r a i n - gate Voltage (R G S = 20 k) G a t e - s o u r c e Voltage D r a i n Current (continuous) at T c = 25 o C D r a i n Current (continuous) at T c = 100 C D r a i n Current (pulsed) T o t a l Dissipation at T c = 25 C D e r a t i n g Factor P e a k Diode Recovery voltage slope S t o r a g e Temperature M a x . Operating Junction Temperature
o o
Value 600 600 ± 30 1 0.63 4 45 0.36 3.5 - 6 5 to 150 150
(1) ISD 1 , di/dt â 200 A/µs, VDD V(BR)DSS, Tj TJMAX
U n it V V V A A A W W /o C V /n s
o o
C C 1/6
(·) Pulse width limited by safe operating area
November 1999
STD1NB60
THERMAL DATA
R t h j - c a se
Rt hj -am b
R t h c - si n k Tl
T h e r m a l Resistance Junction-case Max T h e r m a l Resistance Junction-ambient Max T h e r m a l Resistance Case-sink Typ M a x i m u m Lead Temperature For Soldering Purpose
2.78 100 1.5 275
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Sy m b o l IA R EAS Parameter A v a l a n c h e Current, Repetitive or Not-Repetitive ( p u l s e width limited by T j max) S i n g l e Pulse Avalanche Energy ( s t a r ti n g T j = 25 o C , I D = I A R , V D D = 50 V) M a x Value 1 150 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Sy m b o l V (BR )D SS ID SS IG S S Pa r a m e t e r D r a i n -s o u rc e B r e a k d o w n Voltage T e s t Conditions I D = 250 µA V GS = 0 Min. 600 1 10 ± 100 Typ. Max. U n it V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a i n Current (V G S = 0) V D S = Max Rating G a t e - b o d y Leakage C u r r e n t (V D S = 0) V GS = ± 30 V
T c = 125 o C
ON ()
Sy m b o l V GS(t h) R D S(on) I D(o n) Pa r a m e t e r G a t e Threshold Voltage S t a t i c Drain-source On Resistance V DS = V G S V GS = 10V T e s t Conditions I D = 250 µA I D =0.6 A 1 Min. 3 Typ. 4 7.4 Max. 5 8.5 U n it V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V GS = 10 V
DYNAMIC
Sy m b o l g f s () C i ss C os s C r ss Pa r a m e t e r Forward Transconductance I n p u t Capacitance O u t p u t Capacitance R e v e r s e Transfer C a p a ci t a n c e T e s t Conditions V DS > I D(o n) x R D S (on )max V D S = 25 V f = 1 MHz ID = 1 A VG S = 0 Min. Typ. 0.97 180 32 3.5 Max. U n it S pF pF pF
2/6
STD1NB60
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Sy m b o l t d(on ) tr Qg Qgs Qgd Pa r a m e t e r T u r n - o n Time R i s e Time T o t a l Gate Charge G a t e - S o u r ce Charge G a t e - D r a in Charge T e s t Conditions V D D = 300 V R G = 4.7 V D D = 480 V ID = 0.5 A VG S = 10 V ID = 1 A V G S = 10 V Min. Typ. 13 15 7 2 3.5 10 Max. U n it ns ns nC nC nC
SWITCHING OFF
Sy m b o l tr ( V o f f ) tf tc Pa r a m e t e r O f f - vo l t a g e Rise Time F a l l Time C r o s s - o v e r Time T e s t Conditions V D D = 480 V ID = 1 A R G = 4.7 V G S = 10 V Min. Typ. 27 32 35 Max. U n it ns ns ns
SOURCE DRAIN DIODE
Sy m b o l IS D I S DM (· ) V S D () t rr Q rr I R RM Pa r a m e t e r S o u r c e - d ra in Current S o u r c e - d ra in Current (pulsed) F o r w a r d On Voltage R e v e r s e Recovery Time R e v e r s e Recovery Charge R e v e r s e Recovery Current ISD = 1 A V GS = 0 350 825 4.7 I S D = 1 A di/dt = 100 A/µs V D D = 100 V T j = 150 o C T e s t Conditions Min. Typ. Max. 1 4 1.6 U n it A A V ns nC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
3/6
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