|
|
Part: STD1NC40-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N - Channel 400v- 8ohm - 1a - Ipak Powermesh ii MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD1NC40-1 datasheet File size : 3604 kB
Request For quote: Find where to buy STD1NC40-1
Datasheet text preview:
®
STD1NC40-1
N - CHANNEL 400V - 8 - 1A - IPAK PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE STD1NC40-1
s s s s s
V DS S 40 0 V
R DS ( on ) < 10
ID 1A
TYPICAL RDS(on) = 8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
IPAK TO-251 (Suffix "-1")
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s CFL
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l V DS V DG R VGS ID ID I DM (· ) Ptot dv/dt Ts t g Tj Parameter D r a i n - so u rc e Voltage (V G S = 0) D r a i n - gate Voltage (R G S = 20 k) G a t e - s o u r c e Voltage D r a i n Current (continuous) at T c = 25 o C D r a i n Current (continuous) at T c = 100 C D r a i n Current (pulsed) T o t a l Dissipation at T c = 25 C D e r a t i n g Factor P e a k Diode Recovery voltage slope S t o r a g e Temperature M a x . Operating Junction Temperature
o o
Value 400 400 ± 30 1 0.63 4 25 0.2 3 - 6 5 to 150 150
(1) ISD 1A, di/dt 100 A/µs, VDD V(BR)DSS, Tj TJMAX
U n it V V V A A A W W /o C V /n s
o o
C C 1/5
(·) Pulse width limited by safe operating area
STD1NC40-1
THERMAL DATA
R t h j - c a se
Rt hj -am b
R t h c - si n k Tl
T h e r m a l Resistance Junction-case Max T h e r m a l Resistance Junction-ambient Max T h e r m a l Resistance Case-sink Typ M a x i m u m Lead Temperature For Soldering Purpose
5 100 1.5 275
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Sy m b o l IA R EAS Parameter A v a l a n c h e Current, Repetitive or Not-Repetitive ( p u l s e width limited by T j max) S i n g l e Pulse Avalanche Energy ( s t a r ti n g T j = 25 o C , I D = I A R , V D D = 50 V) M a x Value 1 20 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Sy m b o l V (BR )D SS ID SS IG S S Pa r a m e t e r D r a i n -s o u rc e B r e a k d o w n Voltage T e s t Conditions I D = 250 µA V GS = 0 Min. 400 1 10 ± 100 Typ. Max. U n it V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a i n Current (V G S = 0) V D S = Max Rating G a t e - b o d y Leakage C u r r e n t (V D S = 0) V GS = ± 30 V
T c = 125 o C
ON ()
Sy m b o l V GS(t h) R D S(on) I D(o n) Pa r a m e t e r G a t e Threshold Voltage S t a t i c Drain-source On Resistance V DS = V G S V GS = 10V T e s t Conditions I D = 250 µA I D = 0.5 A 1 Min. 2 Typ. 3 8 Max. 4 10 U n it V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V GS = 10 V
DYNAMIC
Sy m b o l g f s () C i ss C os s C r ss Pa r a m e t e r Forward Transconductance I n p u t Capacitance O u t p u t Capacitance R e v e r s e Transfer C a p a ci t a n c e T e s t Conditions V DS > I D(o n) x R D S (on )max V D S = 25 V f = 1 MHz ID = 1 A VG S = 0 Min. Typ. 0.4 100 25 2 Max. U n it S pF pF pF
2/5
STD1NC40-1
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Sy m b o l t d(on ) tr Qg Qgs Qgd Pa r a m e t e r T u r n - o n Time R i s e Time T o t a l Gate Charge G a t e - S o u r ce Charge G a t e - D r a in Charge T e s t Conditions V D D = 200 V R G = 4.7 V D D = 320 V ID = 0.5 A VG S = 10 V ID = 1 A V G S = 10 V Min. Typ. 12 21 4 2 2.5 Max. U n it ns ns nC nC nC
SWITCHING OFF
Sy m b o l tr ( V o f f ) tf tc Pa r a m e t e r O f f - vo l t a g e Rise Time F a l l Time C r o s s - o v e r Time T e s t Conditions V D D = 320 V ID = 1 A R G = 4.7 V G S = 10 V Min. Typ. 11 21 10 Max. U n it ns ns ns
SOURCE DRAIN DIODE
Sy m b o l IS D I S DM (· ) V S D () t rr Q rr I R RM Pa r a m e t e r S o u r c e - d ra in Current S o u r c e - d ra in Current (pulsed) F o r w a r d On Voltage R e v e r s e Recovery Time R e v e r s e Recovery Charge R e v e r s e Recovery Current ISD = 1 A V GS = 0 340 0.95 5.6 I S D = 1 A di/dt = 100 A/µs V D D = 100 V T j = 150 o C T e s t Conditions Min. Typ. Max. 1 4 1.5 U n it A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
3/5
Others parts begin by st
ST-1 ST-2 ST-3 ST-4 ST-5 ST-6 ST-7 ST-8 ST-9 ST-10 ST-11 ST-12 ST-13 ST-14 ST-15 ST-16 ST-17 ST-18 ST-19 ST-20 ST-21 ST-22 ST-23 ST-24 ST-25 ST-26 ST-27 ST-28 ST-29 ST-30 ST-31 ST-32 ST-33 ST-34 ST-35 ST-36 ST-37 ST-38 ST-39 ST-40 ST-41 ST-42 ST-43 ST-44 ST-45 ST-46 ST-47 ST-48 ST-49 ST-50 ST-51 ST-52 ST-53 ST-54 ST-55 ST-56 ST-57 ST-58 ST-59 ST-60 ST-61 ST-62 ST-63 ST-64 ST-65 ST-66 ST-67 ST-68 ST-69 ST-70 ST-71 ST-72 ST-73 ST-74
|
|
|
