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Part: STD1NC60T4
Category:
Description: N-channel 600V 7 Ohm 1.4A Dpak/ipak Powermesh ii MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD1NC60T4 datasheet File size : 3604 kB
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Datasheet text preview:
STD1NC60
N-CHANNEL 600V - 7 - 1.4A - DPAK/IPAK PowerMeshTMII MOSFET
TYPE STD1NC60
s s s s s
VDSS 600 V
RDS(on) <8
ID 1.4 A
TYPICAL RDS(on) = 7 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251
3 3 2 1
DPA K T O- 2 5 2
1
DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s S WI TH MODE POWER SUPPLIES (SMPS) s DC-A C CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
s
INTERN AL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DG R VGS ID ID IDM (1) PTOT dv/dt Tstg Tj
.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 600 600 ±30 1.4 0.9 5.6 35 0.28 3.5 65 to 150 150
(1)ISD 1.4A, di/dt 100A/µs, VDD V (BR)DSS, Tj T JMAX
Unit V V V A A A W W/°C V/ns °C °C
(·)Pulse width limited by safe operating area
December 2000
1/9
STD1NC60
THERMAL DATA
Rthj-case Rthj-amb Rthj-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.6 100 1.5 275 °C/W °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 1.4 70 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 600 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 0.7 A VDS > ID(on) x RDS(on)max, VGS = 10V 1.4 Min. 2 Typ. 3 7 Max. 4 8 Unit V A
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.7A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.25 160 26 3.8 Max. Unit S pF pF pF
2/9
STD1NC60
ELECTRICAL CHARACTERISTICS (CONTINUED) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300V, ID = 0.7 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 1.4 A, VGS = 10V Min. Typ. 8 8 8.5 2.8 2.8 11.5 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480V, ID = 1.4 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 25 9 34 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.4 A, VGS = 0 ISD = 1.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 500 950 3.8 Test Conditions Min. Typ. Max. 1.4 5.6 1.6 Unit A A V ns nC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/9
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