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Part: STD1NK60-1
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Medium Voltage
Description: N-channel 600V - 8 Ohm - 1A DPAK/IPAK/TO-92 Supermesh Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD1NK60-1 datasheet File size : 3604 kB
Request For quote: Find where to buy STD1NK60-1
Datasheet text preview:
STD1NK60 - STD1NK60-1 STQ1HNK60R
N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESHTMPower MOSFET
TYPE STD1NK60 STD1NK60-1 STQ1HNK60R
s s s s s
VDSS 600 V 600 V 600 V
RDS(on) < 8.5 < 8.5 < 8.5
ID 1A 1A 0.4 A
Pw 30 W 30 W 3W
1
3 2
3 1
TYPICAL RDS(on) = 8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
IPAK
DPAK
DESCRIPTION The SuperMESH TM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly dow n, special care is taken to ensure a very good dv/dt ca pab ility for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
TO-92 (Ammopack)
TO-92
INTERNAL SCHEMATIC D IAGRAM
APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s LOW P O WE R, LOW CO S T CFL (COM P AC T FLUORESCEN T LAMPS) s LOW P O WE R B A TT E RY CHA RGE RS
s
ORDERING INFORMATION
SALES TYPE STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP MARKING D1NK60 D1NK60 1HNK60R 1HNK60R PACKAGE DPAK IPAK TO-92 TO-92 PACKAGING TAPE & REEL TUBE BULK AMMOPAK
June 2003
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
ABSOLUTE MAXIMUM RA TINGS
Symbol Parameter
STD1NK60 STD1NK60-1
Value
ST Q1HNK60R
Unit
VDS VD G R V GS ID ID ID M ( ) PTOT dv/dt (1) Tj Tstg
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.0 0.63 4 30 0.24
6 00 6 00 ± 30 0.4 0.25 1.6 3 0.025 3 -55 to 150
V V V A A A W W/°C V/ns °C
( ) Pulse width limited by safe operating area (1) ISD 1.0A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
DPAK / IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 275 4.16 100 120 40 260 TO-92 °C/W °C/W °C/W °C
AVA LANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value DPAK / IPAK 1 25 TO-92 A mJ Unit
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STD1NK60 - STD1NK60-1 - STQ1HNK60R
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON / OF F
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5 A 2.25 3 8 Min. 600 1 50 ±100 3.7 8.5 Typ. Max. Unit V µA µA nA V
DYN AMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1 156 23.5 3.8 Max. Unit S pF pF pF
SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V, ID = 0.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 1.0 A, VGS = 10V, RG = 4.7 Min. Typ. 6.5 5 7 1.1 3.4 10 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 0.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 1.0 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 19 25 24 25 44 Max. Unit ns ns ns ns ns
SOURCE DR AIN DIODE
Symbol ISD ISDM (2) VSD (1) tr r Q rr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, VGS = 0 ISD = 1.0 A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 5) 229 377 3.3 Test Conditions Min. Typ. Max. 1 4 1.6 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
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