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Part: STD20N06
Category:
Discrete
-> Transistors
Description: N - Channel Enhancement Mode Ultra High Density B Power MOS Transistor
Company: ST Microelectronics, Inc.
Datasheet: Download STD20N06 datasheet File size : 267 kB
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Datasheet text preview:
STD20N06
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA T YP E S T D 20N0 6
s s s s s s s s
VD S S 60 V
R DS ( o n ) < 0. 03
ID 20 A ( *)
s
TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
IPAK TO-251 (Suffix "-1")
2
1
DPAK TO-252
3
(Suffix "T4")
DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION
s
I NTERNAL SCHEMATIC DI AGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb o l VD S V DG R VG S ID ID ID M( ·) P tot Tstg Tj P ar a m e t e r D r ain - s our c e Vo lt a ge ( V G S = 0) D r ain - g at e V ol ta ge ( R GS = 20 k ) G a t e- s ou r c e V olt a ge D r ain C ur r ent ( c ont in uous ) at T c = 25 oC D r ain C ur r ent ( c ont in uous ) at T c = 10 0 C D r ain C ur r ent ( puls ed ) T o t a l D i s s i p a t i o n a t Tc = 2 5 C D er at in g F ac t or S t or a ge T e m per at ur e M ax . O per at in g J un c t io n T em p era t ur e
o o
V al u e 60 60 ± 20 20 14 80 60 0. 4 - 6 5 t o 175 175
Uni t V V V A A A W W /o C
o o
C C
(*) Current limited by the package (·) Pulse width limited by safe operating area (*)
March 1995
1/10
STD20N06
THERMAL DATA
R thj-cas e Rt h j - a mb Rt h j - a mb Tl T h e r ma l R e s i s t a n c e J u n c t i o n - c a s e T her ma l Res is t anc e J unc t ion - am bie nt T her ma l Res is t anc e Cas e - s i nk M ax im um L ea d T em pe r at ur e F o r S ol de r ing P u r pos e M ax M ax T yp 2. 5 10 0 1. 5 30 0
o o
C/ W C/ W o C/ W o C
AVALANCHE CHARACTERISTICS
S ymb o l IA R E AS P a ra met er A v alanc h e Cu r r ent , R ep et i ti v e or No t- R ep et it iv e ( p uls e w id t h lim it ed by T j m ax , < 1% ) S i ngle P ul s e A v al an c he E ner gy ( s t ar t i ng T j = 25 o C , ID = I A R, L = 330 µ H, V DD = 25 V ) ( s e e wa v ef or m s , f igur e 2) R epet it iv e A v al an c he E n erg y ( p uls e w id t h lim it ed by T j m ax , < 1% ) A v alanc h e Cu r r ent , R ep et i ti v e or No t- R ep et it iv e ( T c = 100 o C, puls e wid th l im it ed b y T j m ax , < 1% ) M ax V al u e 20 80 Uni t A mJ
EA R IA R
20 14
mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
S ymb o l V( B R ) D S S IDS S IG S S P aram et er D r ain - s our c e B r eak d own Vo lt a ge T e st Co n d i t i o n s I D = 25 0 µ A VG S = 0 Mi n . 60 250 1000 ± 10 0 Typ. M ax. Unit V µA µA nA
Z er o G at e V olt age V D S = M a x R at ing D r ain C ur r ent ( V G S = 0) V D S = M a x R at ing x 0 . 8 G a t e- bo dy Leak a ge C ur r e nt ( V D S = 0 ) V G S = ± 20 V
T c = 1 2 5 oC
ON ( )
S ymb o l V G S( t h ) RDS( on) ID( on) P aram et er G a t e T hr es ho ld V olt ag e V D S = V GS S t at ic Dr ain- s our c e O n R es is t anc e O n S t at e Dr a in C ur r e nt T e st Co n d i t i o n s I D = 2 50 µ A T c = 1 0 0 oC 20 Mi n . 2 Typ. 3 0. 02 6 M ax. 4 0. 03 0. 06 Unit V A
V G S = 1 0 V ID = 1 0 A V G S = 1 0V I D = 10 A V D S > ID ( o n ) x RD S( o n ) ma x V GS = 10 V
DYNAMIC
S ymb o l gf s ( ) C iss Coss Crss P aram et er F or w ar d T r an s c ondu c t anc e I np ut C ap ac it an c e O u t put Cap ac it an c e R ev er s e T r a ns f er C apac i t anc e T e st Co n d i t i o n s V D S > ID ( o n ) x RD S( o n ) ma x V D S = 25 V f = 1 MH z ID = 1 0 A VG S = 0 Mi n . 11 Typ. 16 20 00 3 50 80 2800 450 120 M ax. Unit S pF pF pF
2/10
STD20N06
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
S ymb o l td(on) tr ( d i / d t) o n P aram et er T ur n - on T im e R is e T i m e T ur n - on C ur r e nt S lope T e st Co n d i t i o n s V DD = 30 V ID = 1 0 A VG S = 10 V R G = 50 ( s e e t e s t c ir c ui t, f i gu r e 3) V DD = 48 V ID = 2 0 A R G = 50 VG S = 10 V ( s e e t e s t c ir c ui t, f i gu r e 5) V D D = 40 V ID = 2 0 A V G S = 10 V Mi n . Typ. 45 2 80 2 40 M ax. 65 380 Unit ns ns A/ µs
Qg Qgs Qgd
T ot al G at e C ha r ge G a t e- S our c e Ch ar ge G a t e- Dr a in Ch ar ge
60 10 20
80
nC nC nC
SWITCHING OFF
S ymb o l t r ( Vo f f ) tf tc P aram et er O f f - v o lt age R is e T im e F all T im e C r os s - o v er T im e T e st Co n d i t i o n s V D D = 4 8 V ID = 2 0 A R G = 50 VG S = 10 V ( s e e t e s t c ir c ui t, f i gu r e 5) Mi n . Typ. 55 1 25 2 00 M ax. 75 170 270 Unit ns ns ns
SOURCE DRAIN DIODE
S ymb o l IS D I SD M( · ) VS D ( ) trr Qrr IRRM P aram et er S o ur c e - dr ain C ur r e nt S o ur c e - dr ain C ur r e nt ( p uls e d) F or w ar d O n V olt age R ev er s e Rec ov er y T im e R ev er s e Rec ov er y C har ge R ev er s e Rec ov er y C ur r e nt ISD = 20 A VG S = 0 80 0.3 7 I S D = 20 A d i/ dt = 1 00 A /µ s T j = 1 50 o C V D D = 30 V ( s e e t e s t c ir c ui t, f i gu r e 5) T e st Co n d i t i o n s Mi n . Typ. M ax. 20 80 1. 5 Unit A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
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