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Part: STD20NE03L
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: Old PRODUCT: Not Suitable For Design-in
Company: ST Microelectronics, Inc.
Datasheet: Download STD20NE03L datasheet File size : 251 kB
Request For quote: Find where to buy STD20NE03L
Datasheet text preview:
STD20NE03L
N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET
TYPE ST D 2 0 N E0 3 L
s s s s s
V DS S 30 V
R DS ( on ) < 0.020
ID 20 A
TYPICAL RDS(on) = 0.016 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION
3 2 1
1 3
DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
IPAK TO-251 (Suffix "-1")
DPAK TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V D GR VGS ID ID I DM (· ) Pt o t Parameter D r a i n - s o u rc e Voltage (V G S = 0) D r a i n - gate Voltage (R G S = 20 k) G a t e - s o u r c e Voltage D r a i n Current (continuous) at T c = 25 o C D r a i n Current (continuous) at T c = 100 o C D r a i n Current (pulsed) T o t a l Dissipation at T c = 25 C D e r a t i n g Factor dv/dt( 1) T st g Tj P e a k Diode Recovery voltage slope S t o r a g e Temperature M a x. Operating Junction Temperature
o
Va lu e 30 30 ± 15 20** 20** 100 50 0.33 7 -6 5 to 175 175
(1) ISD 40 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit V V V A A A W W/ oC V/ns
o o
C C
(·) Pulse width limited by safe operating area (**) Value limited only by the package
December 1997
1/9
STD20NE03L
THERMAL DATA
R t h j - c a se R t hj- amb R t h c- si n k Tl T h e r m a l Resistance Junction-case Max T h e r m a l Resistance Junction-ambient Max T h e r m a l Resistance Case-sink Typ M a x i m u m Lead Temperature For Soldering Purpose 3 1 00 1.5 2 75
o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS P a r a m e te r A v a l a n c h e Current, Repetitive or Not-Repetitive ( p u l s e width limited by T j max, < 1%) S i n g l e Pulse Avalanche Energy ( s t a r ti n g T j = 25 o C , I D = I A R , VD D = 25V) M a x Value 20 1 40 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR )DSS I DS S Pa ra m e te r D r a i n - s o u rc e B r e a k d o w n Voltage T e s t Conditions I D = 250 µA VG S = 0 Min. 30 1 10 ± 100 Typ. Ma x. Unit V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a i n Current (V GS = 0) V D S = Max Rating o C G a t e - b o d y Leakage C u r r e n t (V D S = 0) V G S = ± 15 V
T c = 125
IGSS
ON ()
Symbol V GS(t h) R DS ( on) ID ( o n ) Pa ra m e te r G a t e Threshold Voltage S t a t i c Drain-source On Resistance V D S = VG S T e s t Conditions ID = 250 µA Min. 1 Typ. 1.8 0.016 20 Ma x. 2.5 0.02 0 .0 2 6 Unit V A
V G S = 10V I D = 10 A V G S = 5V I D = 10 A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V G S = 10 V
DYNAMIC
Symbol g f s () C is s C o ss C r ss Pa ra m e te r Forward Transconductance I n p u t Capacitance O u t p u t Capacitance R e v e r s e Transfer C a p a c it a n c e T e s t Conditions V D S > I D (on) x R D S(on) max V D S = 25 V f = 1 MHz I D = 10 A VG S = 0 Min. 12 Typ. 18 1850 450 160 2 400 59 0 21 0 Ma x. Unit S pF pF pF
2/9
STD20NE03L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Qgs Qgd Pa ra m e te r T u r n - o n Time R i s e Time T o t a l Gate Charge G a t e - S o u r c e Charge G a t e - D r a in Charge T e s t Conditions V D D = 15 V R G =4.7 V D D = 24 V I D = 20 A VGS = 5 V I D = 40 A VG S = 5 V Min. Typ. 25 160 29 12 14 Ma x. 33 21 0 38 Unit ns ns nC nC nC
SWITCHING OFF
Symbol t r( Voff) tf tc Pa ra m e te r O f f - vo lt a g e Rise Time F a l l Time C r o s s - o v e r Time T e s t Conditions V D D = 24 V R G =4.7 I D = 40 A V GS = 5 V Min. Typ. 25 120 155 Ma x. 33 16 0 21 0 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I S DM (· ) V S D () t rr Q rr I RR M Pa ra m e te r S o u r c e - d r a in Current S o u r c e - d r a in Current (pulsed) F o r w a r d On Voltage R e v e r s e Recovery Time R e v e r s e Recovery C h a rg e R e v e r s e Recovery Current I S D = 20 A I S D = 40 A V D D = 20 V VG S = 0 di/dt = 100 A/µs o T j = 150 C 50 0.9 3.5 T e s t Conditions Min. Typ. Ma x. 20 10 0 1.5 Unit A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
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