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Part: STD20NE06
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: N-channel Enhancement Mode Single Feature Size Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD20NE06 datasheet File size : 251 kB
Request For quote: Find where to buy STD20NE06
Datasheet text preview:
STD20NE06
N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET
TYPE ST D 2 0 N E0 6
s s s s
V DS S 60 V
R D S (on ) < 0.040
ID 20 A
s
TYPICAL RDS(on) = 0.032 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT
s
DPAK TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID ID M ( · ) Ptot Parameter D r a i n - so u rc e Voltage (V G S = 0) D r a i n - gate Voltage (R G S = 20 k) G a t e - s o u r c e Voltage D r a i n Current (continuous) at T c = 25 C D r a i n Current (continuous) at T c = 100 C D r a i n Current (pulsed) T o t a l Dissipation at T c = 25 o C D e r a t i n g Factor d v /d t Tstg Tj P e a k Diode Recovery voltage slope S t o r a g e Temperature M a x . Operating Junction Temperature
o o
V a lu e 60 60 ± 20 20** 17 80 50 0 .3 3 7 -6 5 to 175 17 5
(1) ISD 36 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
U ni t V V V A A A W W/ oC V/ n s
o o
C C
(·) Pulse width limited by safe operating area (**) Value limited only by the package
January 1998
1/8
STD20NE06
THERMAL DATA
R t h j - c a se
R t hj -am b
R t h c- si n k Tl
T h e r m a l Resistance Junction-case Max T h e r m a l Resistance Junction-ambient Max T h e r m a l Resistance Case-sink Typ M a x i m u m Lead Temperature For Soldering Purpose
3.0 100 1.5 275
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbol IAR EAS P a r a m e te r A v a l a n c h e Current, Repetitive or Not-Repetitive ( p u l s e width limited by T j max, < 1%) S i n g l e Pulse Avalanche Energy ( s t a r ti n g T j = 25 o C , I D = I A R , VD D = 25 V) M a x Value 20 80 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR )DSS I DS S Pa ra m e te r D r a i n - s o u rc e B r e a k d o w n Voltage T e s t Conditions I D = 250 µA VG S = 0 Min. 60 1 10 ± 100 Typ. Ma x. Unit V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a i n Current (V GS = 0) V D S = Max Rating o C G a t e - b o d y Leakage C u r r e n t (V D S = 0) V G S = ± 20 V
T c = 125
IGSS
ON ()
Symbol V GS(t h) R DS ( on) ID ( o n ) Pa ra m e te r G a t e Threshold Voltage S t a t i c Drain-source On Resistance V D S = VG S V G S = 10V T e s t Conditions ID = 250 µA I D = 10 A 20 Min. 2 Typ. 3 0.032 Ma x. 4 0.04 Unit V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V G S = 10 V
DYNAMIC
Symbol g f s () C is s C o ss C r ss Pa ra m e te r Forward Transconductance I n p u t Capacitance O u t p u t Capacitance R e v e r s e Transfer C a p a c it a n c e T e s t Conditions V D S > I D (on) x R D S(on) max V D S = 25 V f = 1 MHz I D =10 A VG S = 0 Min. 7 Typ. 13 2115 260 65 2 800 35 0 90 Ma x. Unit S pF pF pF
2/8
STD20NE06
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr ( d i / d t )o n Qg Qgs Qgd Pa ra m e te r T u r n - o n Time R i s e Time T u r n - o n Current Slope T o t a l Gate Charge G a t e - S o u r c e Charge G a t e - D r a in Charge T e s t Conditions V D D = 30 V R G =4.7 V D D = 48 V R G = 47 V D D = 48 V I D = 18 A V G S = 10 V I D = 36 A V G S =10 V I D = 36 A VG S = 10 V Min. Typ. 28 85 250 50 13 18 70 Ma x. 40 11 5 Unit ns ns A/µs nC nC nC
SWITCHING OFF
Symbol t r( Voff) tf tc Pa ra m e te r O f f - vo lt a g e Rise Time F a l l Time C r o s s - o v e r Time T e s t Conditions V D D = 48 V I D = 36 A R G =4.7 V G S = 10 V Min. Typ. 12 25 40 Ma x. 16 35 55 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I S DM (· ) V S D () t rr Q rr I RR M Pa ra m e te r S o u r c e - d r a in Current S o u r c e - d r a in Current (pulsed) F o r w a r d On Voltage R e v e r s e Recovery Time R e v e r s e Recovery C h a rg e R e v e r s e Recovery Current I S D = 20 A I S D = 36 A V D D = 30 V VG S = 0 di/dt = 100 A/µs T j = 150 o C 75 245 6.5 T e s t Conditions Min. Typ. Ma x. 20 80 1.5 Unit A A V ns nC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
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