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Part: STD20NF06
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> Low Voltage
Description: N-channel 60V - 0.032 Ohm - 24A Dpak StripFET ii Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download STD20NF06 datasheet File size : 251 kB
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Datasheet text preview:
N-CHANNEL 60V - 0.032 - 24A DPAK STripFETTM II POWER MOSFET
TYPE STD20NF06
s s s s
STD20NF06
PRELIMINARY DATA
VD S S 60 V
RDS(on) < 0.040
ID 24 A
s
TYPICAL RDS(on) = 0.032 EXC EPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
DPAK TO-252 (Suffix "T4")
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s A UDIO AMPLIFIERS s P OWE R TOOLS s A UTO MO TI V E ENVIRONMENT
Ordering Information
SAL ES TYPE STD20NF06 MARKING ST D20NF06 PACKAGE TO-252 PACKAGING TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DG R VGS ID ID IDM(·) Ptot dv/dt (1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 20 24 17 96 60 0.4 10 300 -55 to 175
(1) ISD 24A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID =10 A, VDD = 45V
Unit V V V A A A W W/°C V/ns mJ °C
(·) Pulse width limited by safe operating area. May 2003
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD20NF06
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max 2.5 100 275 °C/W °C/W °C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 12 A Min. 2 0.032 Typ. Max. 4 0.040 Unit V
DYN AMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V ID = 12 A Min. Typ. 15 690 170 68 Max. Unit S pF pF pF
VDS = 25V f = 1 MHz VGS = 0
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STD20NF06
ELECTRICAL CHARACTERISTICS (continued) SW ITCHIN G ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 10 A VDD = 30 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 48 V ID= 20 A VGS= 10 V Min. Typ. 10 30 23 5 7.5 31 Max. Unit ns ns nC nC nC
SW ITCHIN G OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 10 A VDD = 30 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Min. Typ. 30 8 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (·) VSD (*) tr r Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
1.5 %.
Test Conditions
Min.
Typ.
Max. 24 96
Unit A A V ns nC A
ISD = 96 A
VGS = 0 65 150 4.6
1.5
di/dt = 100A/µs ISD = 96 A VDD = 20 V Tj = 150°C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle (·)Pulse width limited by safe operating area.
3/7
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