Details, datasheet, quote on part number: STL20NM20N
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Medium Voltage
TitleMedium Voltage
DescriptionN-channel 200V 0.11 Ohm 20A Powerflat Ultra Low Gate Charge Mdmesh ii MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL20NM20N datasheet
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Features, Applications


DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given on-resistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination with secondary-side low-voltage STripFETTM products, it contributes to reducing losses and boosting efficiency.The new PowerFLATTM package allows a significant reduction in board space without compromising performance. APPLICATIONS The MDmeshTM family is very suitable for increasing power density allowing system miniaturization and higher efficiencies


Symbol VDS VDGR VGS ID (2) IDM (3) PTOT (2) PTOT (4) dv/dt (5) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuous) = 25C (Steady State) Drain Current (continuous) = 100C Drain Current (pulsed) Total Dissipation = 25C (Steady State) Total Dissipation = 25C (Steady State) Derating Factor (2) Peak Diode Recovery voltage slope Value Unit W/C V/ns

Symbol Rthj-F Tj Tstg Parameter Thermal Resistance Junction-Foot (Drain) to 150 Max. Operating Junction Temperature Storage Temperature Typ. Max. 1.56 50 Unit C/W C

Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting = 25 C, ID = IAR, VDD 35 V) Max Value TBD Unit A mJ


Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 30 V VDS = VGS, 250 A VGS 4.2 0.11 Min. Typ. Max. Unit nA V

Symbol gfs (6) Ciss Coss Crss Coss eq. RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS 2 A VDS = 1 MHz, VGS = 0 Min. Typ. TBD Max. Unit S pF

VGS = 0V, VDS = 1 MHz Gate DC Bias = 0 Test Signal Level 20 mV Open Drain

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from to 80% VDSS

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS 10 V (see test circuit, Figure 3) VDD 4 A, VGS 10 V Min. Typ. TBD 3.5 11 Max. Unit ns nC

Symbol tr(Voff) tf tc Parameter Off-Voltage RiseTime Fall Time Cross-Over Time Test Conditions VDD = 4.7, VGS 10 V (see test circuit, Figure 3) Min. Typ. TBD Max. Unit ns

Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

ISD 2 A, VGS = 0 ISD 2 A, di/dt = 100 A/s, VDD = 25C (see test circuit, Figure 5) ISD 2 A, di/dt = 100 A/s, VDD = 150C (see test circuit, Figure TBD

Current Limited by Package. The value is rated according to Rthj-F. When Mounted on FR-4 Board oz Cu Pulse width limited by safe operating area The value is rated according to Rthj-F. ISD 20A, di/dt 400A/s, VDD V(BR)DSS, TJ T JMAX Pulsed: Pulse duration = 300 s, duty cycle 1.5 %


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