Details, datasheet, quote on part number: STL28NF3LL
PartSTL28NF3LL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage
TitleLow Voltage
DescriptionN-channel 30V 0.0055 Ohm 28A Powerflat Low Gate Charge StripFET ii MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL28NF3LL datasheet
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Features, Applications
N-CHANNEL - 28A PowerFLATTM LOW GATE CHARGE STripFETTM MOSFET
TYPICAL RDS(on) = 0.0055 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance.

Symbol VDS VDGR VGS ID(#) IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuos) = 25C Drain Current (continuos) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value to 150

(q ) Pulse width limited by safe operating area Limited by Wire Bonding

Rthj-case Rthj-pcb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 31.2 C/W

ELECTRICAL CHARACTERISTICS (TCASE 25 C UNLESS OTHERWISE SPECIFIED) OFF

Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 16V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, = 250A VGS 14 A VGS = 14A Min. Typ. Max. Unit V

Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS 14 A VDS = 1 MHz, VGS = 0 Min. Typ. Max. Unit S pF

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS = 4.5V (see test circuit, Figure 3) VDD 28 A, VGS 5 V Min. Typ. Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 4.7, VGS 4.5 V (see test circuit, Figure 3) Min. Typ. 42 35 Max. Unit ns

Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD 28 A, VGS = 0 ISD 28 A, di/dt = 100A/s, VDD = 150C (see test circuit, Figure Test Conditions Min. Typ. Max. 112 1.2 Unit nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area.


 

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