Details, datasheet, quote on part number: STL28NF3LL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage
TitleLow Voltage
DescriptionN-channel 30V 0.0055 Ohm 28A Powerflat Low Gate Charge StripFET ii MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL28NF3LL datasheet
Find where to buy


Features, Applications

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance.

Symbol VDS VDGR VGS ID(#) IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuos) = 25C Drain Current (continuos) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value to 150

(q ) Pulse width limited by safe operating area Limited by Wire Bonding

Rthj-case Rthj-pcb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 31.2 C/W


Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 16V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, = 250A VGS 14 A VGS = 14A Min. Typ. Max. Unit V

Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS 14 A VDS = 1 MHz, VGS = 0 Min. Typ. Max. Unit S pF

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS = 4.5V (see test circuit, Figure 3) VDD 28 A, VGS 5 V Min. Typ. Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 4.7, VGS 4.5 V (see test circuit, Figure 3) Min. Typ. 42 35 Max. Unit ns

Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD 28 A, VGS = 0 ISD 28 A, di/dt = 100A/s, VDD = 150C (see test circuit, Figure Test Conditions Min. Typ. Max. 112 1.2 Unit nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area.


Some Part number from the same manufacture ST Microelectronics, Inc.
STL30NF3LL N-channel 30V 0.006 Ohm 30A Powerflat Low Gate Charge StripFET ii MOSFET
STL34NF06 N-channel 60V 0.024 Ohm 34A Powerflat Low Gate Charge StripFET ii MOSFET
STL35NF10 N-channel 100V 0.025 Ohm 35A Powerflat Low Gate Charge StripFET ii MOSFET
STL35NF3LL N-channel 30V 0.0055 Ohm 35A Powerflat Low Gate Charge StripFET MOSFET
STL5NK65Z N-channel 650V 1.5 Ohm 4.2A Powerflat Zener-protected Supermesh Power MOSFET
STL6NK55Z N-channel 550V - 1.2OHM - 5.2A POWERFLAT(5X5) Zener-protected Supermesh Power MOSFET
STL9NK30Z N-channel 300V - 0.36 Ohm - 9A Powerflat Zener-protected Supermesh PowermosFET
STLC1 Led Lamps Cluster Driver
STLC1502 STLC1502 - Voice Over ip Processor
STLC1510 Northenlite G.lite DMT Transceiver
STLC1511 Northenlite G.lite Bicmos Analog Front-end Circuit
STLC1512 Northenlite G.lite Loop Driver
STLC1PD Led Lamps Cluster Driver
STLC2150 Bluetooth Radio Transceiver
STLC2410 Bluetooth Baseband
STLC2411 Bluetooth (TM) Baseband
STLC2416 Bluetooth (TM) Baseband With Integrated Flash
STLC2500 Bluetooth Single Chip<<<>>>the STLC2500 is a Single Chip ROM-based Bluetooth<<<>>>solution Implemented in 0.13 M Ultra Low<<<>>>power, Low Leakage CMOS Technology For Applications<<<>>>requiring Integration
STLC3055 WLL & Isdn-ta Subscriber Line Interface Circuit
STLC3055N WLL & Isdn-ta Subscriber Line Interface Circuit
Same catergory

1W02G : Glass Passivated. Pakage = RB-15 ;; Max. Reverse Voltage VRM (V)= 200 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.

62CNQ030 : Schottky Rectifier, Package : Minimod.

BA1579 : 1a Fast Recovery Diodes.

CG2andDG2 : . Specially designed for clamping circuits, horizontal deflection systems and damper applications High temperature metallurgically bonded construction Cavity-free glass passivated junction 2.0 ampere operation at TA=50C with no thermal runaway Typical IR less than 0.1A Hermetically sealed package Capable of meeting environmental standards of MIL-S-19500.

DF60LA160 : Three Phase Diode Modules. Power Diode Module DF60LA/LB is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction output DC current (Tc=111 ) Repetitive peak reverse voltage to 1600V. TjMAX= =150.

FMMT497TA : Transistor High Voltage Sot-23. SOT23 NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR ISSUE 3 DECEMBER 1995 COMPLIMENTARY TYPE PARTMARKING DETAIL FMMT597 497 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER.

SR1660PT : Pakage = TO-3P ;; Max. Reverse Voltage VRM (V)= 60 ;; Max. Aver. Rect. Current io (A)= 16 ;; Ifsm (A)= 250.

SSL12 : Pakage = SMA/DO-214AC ;; Max. Reverse Voltage VRM (V)= 20 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.

A35428-000 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Power Rating: 5.3 watts (0.0071 HP) ; Operating AC Voltage: 16 volts ; Standards and Certifications: RoHS.

CXTA42BK : 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR. s: Polarity: NPN.

F27075-000 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, ROHS COMPLIANT ; Power Rating: 1.5 watts (0.0020 HP) ; Operating AC Voltage: 240 volts ; Standards and Certifications: RoHS.


HSA50180RE : RESISTOR, WIRE WOUND, 50 W, 3 %, 30 ppm, 180 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis, ROHS COMPLIANT ; Resistance Range: 180 ohms ; Tolerance: 3 +/- % ; Temperature Coefficient: 30 ±ppm/°C ; Power Rating: 50 watts (0.0670 HP) ; Standards and Certifications:.

NAZT103M6.3V18X17.5JLSF : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 10000 uF, SURFACE MOUNT, 7575. s: Configuration / Form Factor: Chip Capacitor ; : Polarized ; Capacitance Range: 10000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 630 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 7575 ; Operating.

NTC1870 : 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3. s: Polarity: NPN. On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, is a valid Renesas Electronics document. We appreciate your understanding. Issued by: Renesas Electronics Corporation.

T75016 : 65 A CURRENT SENSE TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Current-Sense ; Mounting: Chip Transformer ; Operating Frequency: 20000 to 50000 Hz.

1206Y1K00560KXR : CAP,CERAMIC,56PF,1KVDC,10% -TOL,10% +TOL,X7R TC CODE,-15,15% TC,1206 CASE. s: Dielectric: Ceramic Composition.

2W01G-LF : 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 60000 mA ; VBR: 100 volts ; Package: ROHS COMPLIANT, PLASTIC, RB-20, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

74457222 : 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 220 microH ; Rated DC Current: 1200 milliamps ; Operating.

0-C     D-L     M-R     S-Z