Details, datasheet, quote on part number: STL30NF3LL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage
TitleLow Voltage
DescriptionN-channel 30V 0.006 Ohm 30A Powerflat Low Gate Charge StripFET ii MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL30NF3LL datasheet
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Features, Applications

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance.


Symbol VDS VDGR VGS ID(#) IDM (l) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuos) = 25C Drain Current (continuos) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value to 150 Unit W/C C

(q) Pulse width limited by safe operating area Limited by Wire Bonding

Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 50 C/W


Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 16V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, = 250A VGS 15 A VGS = 15A Min. Typ. Max. Unit V

Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS 15 A VDS = 1 MHz, VGS = 0 Min. Typ. Max. Unit S pF

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS = 4.5V (see test circuit, Figure 1) VDD 30 A, VGS 5 V (see test circuit, Figure 1) Min. Typ. Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 4.7, VGS 4.5 V (see test circuit, Figure 1) Min. Typ. 36.5 Max. Unit ns

Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD 15 A, VGS = 0 ISD 30 A, di/dt = 100A/s, VDD = 150C (see test circuit, Figure Test Conditions Min. Typ. Max. 120 1.2 Unit nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area.


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