Details, datasheet, quote on part number: STL30NF3LL
PartSTL30NF3LL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage
TitleLow Voltage
DescriptionN-channel 30V 0.006 Ohm 30A Powerflat Low Gate Charge StripFET ii MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL30NF3LL datasheet
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Features, Applications
N-CHANNEL - 30A PowerFLATTM LOW GATE CHARGE STripFETTM MOSFET
TYPICAL RDS(on) = 0.008 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance.

APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT

Symbol VDS VDGR VGS ID(#) IDM (l) PTOT Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuos) = 25C Drain Current (continuos) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value to 150 Unit W/C C

(q) Pulse width limited by safe operating area Limited by Wire Bonding

Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 50 C/W

ELECTRICAL CHARACTERISTICS (TCASE 25 C UNLESS OTHERWISE SPECIFIED) OFF

Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 16V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, = 250A VGS 15 A VGS = 15A Min. Typ. Max. Unit V

Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS 15 A VDS = 1 MHz, VGS = 0 Min. Typ. Max. Unit S pF

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS = 4.5V (see test circuit, Figure 1) VDD 30 A, VGS 5 V (see test circuit, Figure 1) Min. Typ. Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 4.7, VGS 4.5 V (see test circuit, Figure 1) Min. Typ. 36.5 Max. Unit ns

Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD 15 A, VGS = 0 ISD 30 A, di/dt = 100A/s, VDD = 150C (see test circuit, Figure Test Conditions Min. Typ. Max. 120 1.2 Unit nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area.


 

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