Details, datasheet, quote on part number: STL35NF10
PartSTL35NF10
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage
TitleLow Voltage
DescriptionN-channel 100V 0.025 Ohm 35A Powerflat Low Gate Charge StripFET ii MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL35NF10 datasheet
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Features, Applications
N-CHANNEL - 35A PowerFLATTM LOW GATE CHARGE STripFETTM MOSFET
TYPICAL RDS(on) = 0.025 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance.

APPLICATIONS s HIGH EFFICIENCY ISOLATED DC/DC CONVETERS

Symbol VDS VDGR VGS ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuos) = 25C Drain Current (continuos) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value to 150 Unit W/C mJ C

(q) Pulse width limited by safe operating area

Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 50 C/W

ELECTRICAL CHARACTERISTICS (TCASE 25 C UNLESS OTHERWISE SPECIFIED) OFF

Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 20V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, = 250A VGS 17.5 A Min. 2 Typ. 2.8 0.025 Max. 4 0.030 Unit V

Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS 15 A VDS = 1 MHz, VGS = 0 Min. Typ. Max. Unit S pF

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS = 10V (see test circuit, Figure 1) VDD 35 A, VGS 10 V (see test circuit, Figure 2) Min. Typ. Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 4.7, VGS 10 V (see test circuit, Figure 1) Min. Typ. 84 28 Max. Unit ns

Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD 18 A, VGS = 0 ISD 35 A, di/dt = 100A/s, VDD = 150C (see test circuit, Figure Test Conditions Min. Typ. Max. 140 1.2 Unit nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area.


 

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