Details, datasheet, quote on part number: STL35NF3LL
PartSTL35NF3LL
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Low Voltage
TitleLow Voltage
DescriptionN-channel 30V 0.0055 Ohm 35A Powerflat Low Gate Charge StripFET MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL35NF3LL datasheet
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Features, Applications
N-CHANNEL - 35A PowerFLATTM LOW GATE CHARGE STripFETTM MOSFET
TYPICAL RDS(on) = 0.0055 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLATTM package allows a significant reduction in board space without compromising performance.

APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT

Symbol VDS VDGR VGS ID(#) IDM (q) PTOT dv/dt(1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuos) = 25C Drain Current (continuos) = 100C Drain Current (pulsed) Total Dissipation = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value TBD to 150

(q) Pulse width limited by safe operating area Limited by Wire Bonding

Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 50 C/W

ELECTRICAL CHARACTERISTICS (TCASE 25 C UNLESS OTHERWISE SPECIFIED) OFF

Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 15V Min. Typ. Max. Unit A nA

Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, = 250A VGS 17.5 A VGS = 17.5A Min. Typ. Max. Unit V

Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, 17.5 A VDS = 1 MHz, VGS = 0 Min. Typ. TBD 900 150 Max. Unit S pF

Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 4.7 VGS = 4.5V (see test circuit, Figure 3) VDD 35 A, VGS 10 V Min. Typ. TBD 80 TBD Max. Unit ns nC

Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions VDD = 4.7, VGS 4.5 V (see test circuit, Figure 3) Min. Typ. TBD Max. Unit ns

Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery ChargeReverse Recovery Current ISD 35 A, VGS = 0 ISD 35 A, di/dt = 100A/s, VDD = 150C (see test circuit, Figure 5) TBD Test Conditions Min. Typ. Max. 140 1.2 Unit nC A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area.


 

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