Details, datasheet, quote on part number: STL5NK65Z
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => Medium Voltage
TitleMedium Voltage
DescriptionN-channel 650V 1.5 Ohm 4.2A Powerflat Zener-protected Supermesh Power MOSFET
CompanyST Microelectronics, Inc.
DatasheetDownload STL5NK65Z datasheet
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Features, Applications


DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.


Symbol VDS VDGR VGS ID (2) IDM (2) PTOT (2) PTOT (1) dv/dt (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS 20 k) Gate- source Voltage Drain Current (continuous) = 25C (Steady State) Drain Current (continuous) = 100C Drain Current (pulsed) Total Dissipation = 25C (Steady State) Total Dissipation = 25C (Steady State) Derating Factor (2) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value to 150 Unit W/C V/ns C

The value is rated according to Rthj-F. When Mounted on FR-4 Board oz Cu Pulse width limited by safe operating area ISD<4.2A, di/dt<300A/s, VDD<V(BR)DSS , TJ<TJMAX

Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting = 25 C, ID = IAR, VDD 50 V) Max Value 4.2 190 Unit A mJ

Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.


Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, 125 C VGS 20V VDS = VGS, = 50A VGS 3.75 1.5 Min. Typ. Max. Unit A V

Symbol gfs (1) Ciss Coss Crss Coss eq. (3) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS 2.1 A VDS = 1 MHz, VGS = 0 Min. Typ. Max. Unit S pF

VGS = 0V, VDS V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain Test Conditions VDD = 4.7 VGS 10 V (Resistive Load see, Figure 3) VDD 4.2 A, VGS = 10V Min.

Symbol td(on) tf td(off) tf Qg Qgs Qgd Parameter Turn-on Delay Time Fall Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Typ. Max. Unit ns nC

Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD 0.76 A, VGS = 0 ISD 4.2 A, di/dt = 100A/s VDD = 150C (see test circuit, Figure Test Conditions Min. Typ. Max. 3 1.6 Unit C A

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from to 80% VDSS.


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