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Details, datasheet, quote on part number: STN0214
 
 
Part numberSTN0214
CategoryDiscrete Semiconductor Products
TitleTransistor (bjt) - Single Discrete Semiconductor Product 200mA 1200V 1.6W NPN
Description
Specifications
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200mA
Power - Max1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 200mA, 2V
Vce Saturation (Max) @ Ib, Ic300 mV @ 20mA, 100mA
Frequency - Transition-
Current - Collector Cutoff (Max)10A
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
PackagingCut Tape (CT)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
CompanyST Microelectronics, Inc.
DatasheetDownload STN0214 datasheet
 


 
Specifications, Features, Applications
Very high voltage NPN power transistor Features
High gain Very high voltage capability
Applications
Description

The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. Figure 1. Internal schematic diagram

Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ

Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tamb 25 C Storage temperature Max. operating junction temperature Value C 150 Unit mA W

Parameter Thermal resistance junction-ambient Value 78 Unit C/W

Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IB = 0) Collector-emitter sustaining voltage (IB = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Test conditions VCE 1400 V VEB 20 mA VCE 2 V VCE 2 V Min. Typ. Max. 10 Unit A




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