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Details, datasheet, quote on part number: STN0214
PartSTN0214
Category
TitleTRANS NPN 1200V 0.2A SOT-223
Description

STMicroelectronics' broad range of power bipolar transistors will give the user the perfect fit for their energy-efficient designs. The range includes Darlington transistors and BJTs with a VCES from 15 V to 1700 V.



CompanyST Microelectronics, Inc.
DatasheetDownload STN0214 datasheet
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Features, Applications
Very high voltage NPN power transistor Features
High gain Very high voltage capability
Applications
Description

The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology. Figure 1. Internal schematic diagram

Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ

Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tamb 25 C Storage temperature Max. operating junction temperature Value C 150 Unit mA W

Parameter Thermal resistance junction-ambient Value 78 Unit C/W

Parameter Collector cut-off current (VBE = 0) Emitter cut-off current (IB = 0) Collector-emitter sustaining voltage (IB = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Test conditions VCE 1400 V VEB 20 mA VCE 2 V VCE 2 V Min. Typ. Max. 10 Unit A


 

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