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Part: STPS20150CT
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
-> Power Schottky Diodes->100 and 150V Power Schottky
Description: High Voltage Power Schottky Rectifier
Company: ST Microelectronics, Inc.
Datasheet: Download STPS20150CT datasheet File size : 65 kB
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Datasheet text preview:
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STPS20150CT/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV) VRRM Tj VF (max)
2 x 10 A 150 V 175°C 0.75 V
K
A2
K
K
FEATURES AND BENEFITS
s
A2 A1
s
s
s
HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED
K A1
A2
D2PAK STPS20150CG
I2PAK STPS20150CR
DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies.
A2 A1 K
K A1 A2
TO-220AB STPS20150CT
TO-220FPAB STPS20150CFP
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 TO-220AB D2PAK / I2PAK TO-220FPAB IFSM PARM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 155°C Tc = 135°C Per diode Per device Value 150 30 10 20 180 6700 - 65 to + 175 175 10000 A W °C °C V/µs Unit V A A
tp = 10 ms sinusoidal tp = 1µs Tj = 25°C
July 2003 - Ed: 6D
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STPS20150CT/CG/CR/CFP
THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter TO-220AB / D PAK / I PAK TO-220FPAB TO-220AB / D PAK / I PAK TO-220FPAB Rth(c) TO-220AB / D PAK / I PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 5 ms, < 2% ** tp = 380 µs, < 2%
2 2 2 2 2 2
Value Per diode Total Coupling 2.2 4.5 1.3 3.5 0.3 2.5
Unit °C/W
Min.
Typ.
Max. 5.0 5.0 0.92
Unit µA mA V
VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.79 0.69
0.75 1 0.86
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS)
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STPS20150CT/CG/CR/CFP
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(AV)(W)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9
Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode).
IF(AV)(A)
12
= 0.05
= 0.1
= 0.2
= 0.5
11 10 9
Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
Rth(j-a)=Rth(j-c) (TO-220FPAB)
=1
8 7 6 5 4
Rth(j-a)=15°C/W
T
3 2
T
IF(AV)(A)
=tp/T
10 11
tp
12
1 0 0
=tp/T
25
tp
50
Tamb(°C)
75 100 125 150 175
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: N o r m a l i z e d a v a l a n c h e p o w e r d e r a t i n g versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220AB, I²PAK and D²PAK
IM(A)
150
TO-220AB, I PAK and D PAK
2 2
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220FPAB
IM(A)
100
TO-220FPAB
90 125 80 70
TC=50°C
100
60 50
TC=50°C
75
TC=75°C
40 30
TC=75°C
50
IM
TC=125°C
t
25
=0.5
20 10 0
IM t
TC=125°C
t(s)
1.E-02 1.E-01 1.E+00
=0.5
t(s)
1.E-02 1.E-01 1.E+00
0 1.E-03
1.E-03
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