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Part: STPS20170CT
Category:
Description: High Voltage Power Schottky Rectifier
Company: ST Microelectronics, Inc.
Datasheet: Download STPS20170CT datasheet File size : 65 kB
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STPS20170CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV) VRRM Tj VF (max)
2 x 10 A 170 V 175°C 0.75 V
A2
K
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED
A2 A1 K
TO-220AB STPS20150CT
DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies.
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current = 0.5 Tc = 155°C Per diode Per device IFSM PARM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature* Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 1µs Tj = 25°C Value 170 30 10 20 180 6700 - 65 to + 175 175 10000 A W °C °C V/µs Unit V A A
* Thermal runaway condition for a diode on its own heatsink Ptot/Tj < 1/(Rth(j-a))
March 2004 - Ed: 1
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STPS20170CT
THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 5 m s, < 2% ** tp = 380 µs, < 2%
Parameter Junction to case Per diode Total Coupling
Value 2.2 1.3 0.3
Unit °C/W
Min.
Typ.
Max. 15 15 0.90
Unit µA mA V
VR = VRRM IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.79 0.69
0.75 0.99 0.86
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF2(RMS)
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STPS20170CT
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(AV)(W)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9
Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode).
IF(AV)(A)
12
= 0.05
= 0.1
= 0.2
= 0.5
11 10 9
Rth(j-a)=Rth(j-c)
=1
8 7 6 5 4
Rth(j-a)=15°C/W
T
3 2
T
IF(AV)(A)
=tp/T
10
tp
11 12
1 0 0
=tp/T
25
tp
Tamb(°C)
50 75 100 125 150 175
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: N o r m a l i z e d a v a l a n c h e p o w e r d e r a t i n g versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
IM(A)
150
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0 0.9
125
0.8 0.7
TC=50°C
100
0.6 0.5
75
TC=75°C
0.4 0.3
50
IM
TC=125°C
t
T
0.2
Single pulse
25
=0.5
t(s)
1.E-02 1.E-01 1.E+00
0.1 0.0 1.E-03 1.E-02
tp(s)
1.E-01
=tp/T
tp
1.E+00
0 1.E-03
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