|
|
Part: STPS2030CG-TR
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
-> Power Schottky Diodes->30 and 40V Power Schottky D
Description: Low Drop Power Schottky Rectifier
Company: ST Microelectronics, Inc.
Datasheet: Download STPS2030CG-TR datasheet File size : 65 kB
Request For quote: Find where to buy STPS2030CG-TR
Datasheet text preview:
®
STPS2030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
A1
IF(AV) VRRM Tj (max) VF (max)
2 x 10 A 30 V 150°C 0.40 V
K
A2
K
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED
s s s s s s
A2 A1
A1
K
A2
D2PAK STPS2030CG
TO-220AB STPS2030CT
DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) Tc = 140°C = 0.5 Per diode Per device
K A1
A2
I2PAK STPS2030CR
Value 30 30 10 20 180 1 2 3000 - 65 to + 150 150 10000
Unit V A A A A A W °C °C V/µs
tp = 10 ms Sinusoidal tp=2 µs square F=1kHz tp = 100 µs square tp = 1µs Tj = 25°C
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
1/6
July 2003 - Ed: 3A
STPS2030CT/CG/CR
THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VR = VRRM IF = IF = IF = IF = 10 A 10 A 20 A 20 A Min. Typ. 0.15 80 0.44 0.34 0.50 0.44 Max. 1.0 160 0.50 0.40 0.58 0.52 Unit mA V Parameter Junction to case TO-220AB - D PAK - I PAK
2 2
Per diode Total Coupling
Value 2.2 1.3 0.3
Unit °C/W °C/W
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.012 IF2(RMS) Fig. 1: Conduction losses versus average current.
PF(AV)(W)
6
Fig. 2: Average forward current versus ambient temperature( = 0.5).
IF(AV)(A)
11
= 0.1
5
= 0.2
= 0.5
10
Rth(j-a)=Rth(j-c)
= 0.05
9 8
4
=1
3
7 6 5
Rth(j-a)=50°C/W
2
4
T
1
3 2
T
IF(AV)(A)
0 0 1 2 3 4 5 6 7 8 9
=tp/T
10 11 12
tp
13
1 0 0
=tp/T
25
tp
50
Tamb(°C)
75 100 125 150
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: N o r m a l i z e d a v a l a n c h e p o w e r d e r a t i n g versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
2/6
STPS2030CT/CG/CR
Fig. 5: N o n r e p e t i t i v e s u r g e p e a k f o r w a r d current versus overload duration (maximum values).
IM(A)
175 150 125 100 75 50
Ta=125°C
IM
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7 0.6
= 0.5
Ta=25°C
0.5
Ta=75°C
0.4 0.3 0.2
= 0.2 = 0.1
T
Single pulse
25 0 1.E-03
t
=0.5
t(s)
1.E-02 1.E-01 1.E+00
0.1 0.0 1.E-03 1.E-02
tp(s)
1.E-01
=tp/T
tp
1.E+00
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA)
1.E+03
Tj=150°C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(nF)
10.0
F=1MHz VOSC=30mVRMS Tj=25°C
1.E+02
Tj=125°C Tj=100°C Tj=75°C
1.E+01
1.E+00
Tj=50°C
1.0
1.E-01
Tj=25°C
1.E-02
VR(V)
1.E-03 0 5 10 15 20 25 30
VR(V)
0.1 1 10 100
Fig. 9: Forward voltage drop versus forward current.
IFM(A)
100
Tj=125°C (maximum values)
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm).
Rth(j-a)(°C/W)
80 70 60
Tj=125°C (typical values)
Tj=25°C (maximum values)
50 40 30 20 10 0
10
VFM(V)
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2
S(Cu)(cm²)
0 5 10 15 20 25 30 35 40
3/6
Others parts begin by st
ST-1 ST-2 ST-3 ST-4 ST-5 ST-6 ST-7 ST-8 ST-9 ST-10 ST-11 ST-12 ST-13 ST-14 ST-15 ST-16 ST-17 ST-18 ST-19 ST-20 ST-21 ST-22 ST-23 ST-24 ST-25 ST-26 ST-27 ST-28 ST-29 ST-30 ST-31 ST-32 ST-33 ST-34 ST-35 ST-36 ST-37 ST-38 ST-39 ST-40 ST-41 ST-42 ST-43 ST-44 ST-45 ST-46 ST-47 ST-48 ST-49 ST-50 ST-51 ST-52 ST-53 ST-54 ST-55 ST-56 ST-57 ST-58 ST-59 ST-60 ST-61 ST-62 ST-63 ST-64 ST-65 ST-66 ST-67 ST-68 ST-69 ST-70 ST-71 ST-72 ST-73 ST-74
|
|
|
