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Part: STPS2045C
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
-> Power Schottky Diodes->45 and 60V Power Schottky D
Description: Power Schottky Rectifier
Company: ST Microelectronics, Inc.
Datasheet: Download STPS2045C datasheet File size : 65 kB
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Datasheet text preview:
®
STPS2045CT/CF/CG/CFP/CR
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10 A VRRM Tj (max) VF (max) 45 V 175 °C 0.57 V
A1 K A2
A1 K A2
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED
s s s s s
TO-220AB STPS2045CT
K
A1 A2 K
A2 A1
ISOWATT220AB STPS2045CF
D2PAK STPS2045CG
A2 K A1
DESCRIPTION Dual center tap Schottky rectifier suited for SwitchMode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AB, I²PAK, ISOWATT220AB, TO-220FPAB or D2PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB / D2PAK / I²PAK ISOWATT220AB TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Parameter Repetitive peak reverse voltage
A2 K A1
TO-220FPAB STPS2045CFP
I²PAK STPS2045CR
Value 45 30 Tc = 155°C Tc = 125°C Per diode Per device 10 20 180 1 2 4000 -65 to +175 175 10000
Unit V A A
tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 ms square tp = 1µs Tj = 25°C
A A A W °C °C V/µs
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
1/8
July 2003 - Ed: 4F
STPS2045CT/CF/CG/CFP/CR
THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D2PAK I²PAK ISOWATT220AB TO-220FPAB Rth (c) TO-220AB / D2PAK I²PAK ISOWATT220AB TO-220FPAB When the diodes 1 and 2 are used simultaneously: Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Tests Conditions Tj = 25°C Tj = 125°C VF * Forward voltage drop Tj = 125°C Tj = 25°C Tj = 125°C
Pulse test : * tp = 380 µs, < 2%
Value Per diode Total Per diode Total Coupling 2.2 1.3 4.5 3.5 0.3 2.5
Unit °C/W
Min.
Typ.
Max. 100
Unit µA mA V
VR = VRRM 7 IF = 10 A IF = 20 A IF = 20 A 0.65 0.5
15 0.57 0.84 0.72
To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS)
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STPS2045CT/CF/CG/CFP/CR
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 8 9
=tp/T
T
Fig. 2: Average current versus temperature (=0.5, per diode).
IF(av)(A)
ambient
= 0.1 = 0.05
= 0.2
12
= 0.5
Rth(j-a)=Rth(j-c)
10
=1
TO-220AB D²PAK
8 6 4 2
=tp/T
T
Rth(j-a)=15°C/W
ISOWATT220AB TO-220FPAB
tp
tp
Tamb(°C) 50 75 100 125 150 175
10
11
12
0
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: N o r m a l i z e d a v a l a n c h e p o w e r d e r a t i n g versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK and I²PAK).
IM(A) 140 120 100 80 60 40 20 0 1E-3
IM t
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
100 80 60
Tc=75°C Tc=100°C Tc=75°C
40 20
IM t
Tc=100°C
Tc=125°C
Tc=125°C
=0.5
=0.5
t(s) 1E-2 1E-1 1E+0
0 1E-3
t(s)
1E-2
1E-1
1E+0
3/8
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