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Part: STPS2060CT
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
-> Power Schottky Diodes->100 and 150V Power Schottky
Description: Power Schottky Rectifier
Company: ST Microelectronics, Inc.
Datasheet: Download STPS2060CT datasheet File size : 65 kB
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Datasheet text preview:
®
STPS2060CT
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS
s
2 x 10 A 60 V 0.58 V
A1 K A2
s
s
s
NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY
K A1 A2
DESCRIPTION High voltage dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required. ABSOLUTE R ATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current Tcase = 120°C VR = 60V = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz tp = 100 µs Per diode Per diode Per device Per diode Per diode Per diode
TO-220AB
Value 60 30 10 20 200 1 1 - 65 to + 150 150 10000
Unit V A A
IFSM IRRM IRSM Tstg Tj dV/dt
Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum junction temperature
A A A °C V/µs
Critical rate of rise of reverse voltage
August 2002 - Ed : 1D
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STPS2060CT
THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.9 0.15 °C/W Unit °C/W
When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL STATIC CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Test Conditions VR = VRRM Tj = 25°C Tj = 125°C VF ** Forward voltage drop IF = 20 A IF = 10 A IF = 20 A C Capacitance 60 V, 1MHz Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C 150 0.58 Min. Typ. Max. 70 33 0.8 0.67 0.94 pF Unit µA mA V
Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : 2 P = 0.54 x IF(AV) + 0.013 x IF (RMS)
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STPS2060CT
PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF.
H2 A
Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.93 1.70 1.70 5.15 2.70 10.40 14.00 2.95 15.75 6.60 3.94 3.89 4.30 1.22 2.40 0.33 0.61 1.14 1.14 4.95 2.40 10.00 13.00 2.65 14.80 6.20 3.40 3.75
Inches Min. 0.169 0.048 0.094 0.013 0.024 0.045 0.045 0.195 0.094 0.394 0.512 0.104 0.583 0.244 0.134 0.148 Max. 0.181 0.052 0.107 0.028 0.037 0.067 0.067 0.202 0.106 0.409 0.551 0.116 0.620 0.260 0.155 0.153
C
A C D
L7
L5
Dia
E F F1 F2 G
OPTIONAL
L6
L2
L9
D
G1 H2 L2 L4
M
F2
F1(x2) L4
16.00 Typ.
0.630 Typ.
L5
E
F G1 G
L6 L7 L9 M Dia.
2.60 Typ.
0.102 Typ.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 3/3
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