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Part: STPS20H100C
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
-> Power Schottky Diodes->100 and 150V Power Schottky
Description: High Voltage Power Schottky Rectifier
Company: ST Microelectronics, Inc.
Datasheet: Download STPS20H100C datasheet File size : 65 kB
Request For quote: Find where to buy STPS20H100C
Datasheet text preview:
®
STPS20H100CT/CF/CG/CR/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS
A2
s
2 x 10 A 100 V 175°C 0.64 V
A1 K A2
A2 A1 K
s s
s s s
s
NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating Voltage = 2000V DC Capacitance = 45 pF AVALANCHE CAPABILITY SPECIFIED
A1
K
TO-220AB STPS20H100CT
ISOWATT220AB STPS20H100CF
A2 K A1
A1
A2 K
TO-220FPAB STPS20H100CFP
K
I2PAK DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB D2PAK / I2PAK Tc = 160°C per diode per device Parameter Repetitive peak reverse voltage Value 100 30 10 20 Unit V A A STPS20H100CR
A1 A2
D2PAK STPS20H100CG
ISOWATT220AB Tc = 145°C TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C 250 1 3 10800 - 65 to + 175 175 10000 A A A W °C °C V/µs
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
1/8
July 2003 - Ed: 4G
STPS20H100CT/CF/CG/CR/CFP
THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK / I PAK ISOWATT220AB / TO-220FPAB TO-220AB / D PAK / I PAK ISOWATT220AB / TO-220FPAB Rth (c) TO-220AB / D PAK / I PAK ISOWATT220AB / TO-220FPAB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C VF ** Forward voltage drop Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C
Pulse test : * tp = 5 ms, < 2% ** tp = 380 µs, < 2%
2 2 2 2 2 2
Value Per diode Per diode Total Total Coupling Coupling 1.6 4 0.9 3.2 0.15 2.5
Unit °C/W
°C/W
Min.
Typ.
Max. 4.5
Unit µA mA V
VR = VRRM 2 IF = 8 A IF = 10 A IF = 16 A IF = 20 A IF = 8 A IF = 10 A IF = 16 A IF = 20 A 0.56 0.59 0.65 0.67
6 0.71 0.77 0.81 0.88 0.58 0.64 0.68 0.73
To evaluate the maximum conduction losses use the following equation : P = 0.55 x IF(AV) + 0.009 x IF2(RMS)
2/8
STPS20H100CT/CF/CG/CR/CFP
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 8 6 4 2 IF(av) (A) 0 0 2 4 6 8
=tp/T
T
Fig. 2: Average forward current versus ambient temperature (=0.5, per diode).
IF(av)(A)
= 0.05
= 0.1
= 0.2
= 0.5
12
Rth(j-a)=Rth(j-c) TO220AB
10
=1
8 6 4 2
tp
Rth(j-a)=15°C/W Rth(j-a)=40°C/W
ISOWATT220AB TO-220FPAB
T
=tp/T
tp
Tamb(°C) 50 75 100 125 150 175
0
10
12
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: N o r m a l i z e d a v a l a n c h e p o w e r d e r a t i n g versus junction temperature.
PARM(tp) PARM(25°C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK, I2PAK)
IM(A) 200 180 160 140 120 100 80 60 40 IM 20 0 1E-3
Fig. 6: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
140 120 100
Tc=50°C Tc=75°C Tc=125°C
80 60
Tj=50°C
Tj=75°C
40
IM
20
t
Tj=125°C
t
=0.5
t(s) 1E-2 1E-1 1E+0
0 1E-3
=0.5
t(s) 1E-2 1E-1 1E+0
3/8
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