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Part: STPS20L15
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
-> Power Schottky Diodes->10, 15, 20 and 25V Power Sc
Description: Low Drop Or-ing Power Schottky Diode
Company: ST Microelectronics, Inc.
Datasheet: Download STPS20L15 datasheet File size : 65 kB
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Datasheet text preview:
®
STPS20L15D/G
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n
20 A 15 V 125°C 0.33 V
K
K
n
n
VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS AVALANCHE CAPABILITY SPECIFIED TO-220AC STPS20L15D
A
A K
NC
DESCRIPTION Packaged in TO-220AC or D2PAK, this device is especially intended for use as an OR-ing diode in fault tolerant power supply equipments. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 115°C = 1 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz tp = 100 µs tp = 1µs Tj = 25°C Parameter Repetitive peak reverse voltage
D2PAK STPS20L15G
Value 15 30 20 310 2 3 13500 - 65 to + 150 125 10000
Unit V A A A A A W °C °C V/µs
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 1.6 Unit °C/W
July 2003 - Ed: 3B
1/5
STPS20L15D/G
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C
Pulse test : * tp = 380 µs, < 2%
Min.
Typ. 200
Max. 6 500 0.41 0.52
Unit mA V
VR = 15V VR = 15V IF = 19 A IF = 40 A IF = 19 A IF = 40 A 0.28 0.42
0.33 0.50
To evaluate the maximum conduction losses use the following equation : P = 0.18 x IF(AV) + 8.10-3 x IF2(RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature ( = 1).
8 7 6 5 4 3 2 1 0 IF(av) (A) 0 2 4 6 8 10 12 14 16
=tp/T
T
PF(av)(W)
= 0.1 = 0.05 = 0.2 = 0.5 =1
tp
18
20
22
22 20 18 16 14 12 10 8 6 4 2 0
IF(av)(A)
Rth(j -a)=Rth(j -c) Rth(j -a)=15°C/W
Rth(j -a)=35°C/W
T
=tp/T
tp
Tamb(°C) 50 75 100 125
0
25
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1µs)
1
Fig. 4: N o r m a l i z e d a v a l a n c h e p o w e r d e r a t i n g versus junction temperature.
1.2 1
PARM(tp) PARM(25°C)
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(µs)
10 100 1000
Tj(°C)
0 0 25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
IM(A) 250 200 150 100 50 0 1E-3
IM t
Tc=50°C
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth( j-c)/Rth(j-c) 1.0 0.8 0.6 0.4
= 0.5
= 0.2 = 0.1
Tc=75°C
T
0.2
=0.5
t(s) 1E-2 1E-1
Tc=110°C
tp (s)
Single pulse
=tp/T
tp
1E+0
0.0 1.0E- 4
1.0E- 3
1.0E- 2
1.0E- 1
1.0E+ 0
2/5
STPS20L15D/G
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
5E+2 1E+2 IR(mA)
5.0
Tj=100°C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(nF)
F=1MHz Tj=25°C
1E+1
1.0
1E+0
Tj=25°C
1E-1
VR(V) 0 2 4 6 8 10 12 14 16
VR( V) 0.1 1 2 5 10 20
Fig. 9: Forward voltage drop versus forward current (typical values).
IFM(A)
200.0 100.0
Tj=125°C
Fig. 10: Forward voltage drop versus forward current (maximum values).
200 100 IFM(A)
Tj=100°C
10.0
Tj=75°C
10
1.0
Tj=25°C
VFM(V)
0.1
1
1 1.2 1.4 1.6
VFM(V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0
0.2
0.4
0.6
0.8
Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS20L15G only)
Rth(j-a) (°C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 S(Cu) (cm²) 16 20 24 28 32 36 40
3/5
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