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Details, datasheet, quote on part number:STU10NB80I
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| Part: | STU10NB80I |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => High Voltage |
| Description: | Old PRODUCT: Not Suitable For Design-in |
| Company: | ST Microelectronics, Inc. |
| Datasheet: | Download STU10NB80I datasheet File size : 46 kB |
| Request For quote: | Find where to buy STU10NB80I
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Datasheet text preview:
STU10NB80
N - CHANNEL 800V - 0.65 - 10A - Max220 PowerMESHTM MOSFET
PRELIMINARY DATA TYPE STU10NB80
s s s s s
V DS S 80 0 V
R DS ( on ) < 0.8
ID 10 A
TYPICAL RDS(on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2 3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s HIGH CURRENT, HIGH SPEED SWITCHING
s
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l V DS V DG R VGS ID ID I DM (· ) Ptot d v / d t (1) Ts t g Tj Parameter D r a i n - so u rc e Voltage (V G S = 0) D r a i n - gate Voltage (R G S = 20 k) G a t e - s o u r c e Voltage D r a i n Current (continuous) at T c = 25 o C D r a i n Current (continuous) at T c = 100 C D r a i n Current (pulsed) T o t a l Dissipation at T c = 25 o C D e r a t i n g Factor P e a k Diode Recovery voltage slope S t o r a g e Temperature M a x . Operating Junction Temperature
o
Value 800 800 ± 30 10 6.3 40 160 1.28 4 - 6 5 to 150 150
(1) ISD 10 , 200 A/µs, VDD V(BR)DSS, Tj TJMAX
U n it V V V A A A W W /o C V /n s
o o
C C
(·) Pulse width limited by safe operating area
April 1999
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STU10NB80
THERMAL DATA
R t h j - c a se
Rt hj -am b
R t h c - si n k Tl
T h e r m a l Resistance Junction-case Max T h e r m a l Resistance Junction-ambient Max T h e r m a l Resistance Case-sink Typ M a x i m u m Lead Temperature For Soldering Purpose
0.78 62.5 0.5 300
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Sy m b o l IA R EAS Parameter A v a l a n c h e Current, Repetitive or Not-Repetitive S i n g l e Pulse Avalanche Energy ( s t a r ti n g T j = 25 o C , I D = I A R , V D D = 50 V) M a x Value 10 660 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Sy m b o l V (BR )D SS ID SS IG S S Pa r a m e t e r D r a i n -s o u rc e B r e a k d o w n Voltage T e s t Conditions I D = 250 µA V GS = 0 Min. 800 1 50 ± 100 Typ. Max. U n it V µA µA nA
Z e r o Gate Voltage V D S = Max Rating D r a i n Current (V G S = 0) V D S = Max Rating G a t e - b o d y Leakage C u r r e n t (V D S = 0) V GS = ± 30 V
T c = 100 o C
ON ()
Sy m b o l V GS(t h) R D S(on) I D(o n) Pa r a m e t e r G a t e Threshold Voltage S t a t i c Drain-source On Resistance V DS = V G S V GS = 10V T e s t Conditions I D = 250 µA I D = 5.5 A 10 Min. 3 Typ. 4 0.65 Max. 5 0.8 U n it V A
O n State Drain Current V D S > I D ( o n ) x R D S ( o n ) m a x V GS = 10 V
DYNAMIC
Sy m b o l g f s () C i ss C os s C r ss Pa r a m e t e r Forward Transconductance I n p u t Capacitance O u t p u t Capacitance R e v e r s e Transfer C a p a ci t a n c e T e s t Conditions V DS > I D(o n) x R D S (on )max V D S = 25 V f = 1 MHz I D = 5.5 A VG S = 0 Min. 1.5 Typ. 10 2900 350 33 Max. U n it S pF pF pF
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Sy m b o l t d(on ) tr Qg Qgs Qgd Pa r a m e t e r T u r n - o n Time R i s e Time T o t a l Gate Charge G a t e - S o u r ce Charge G a t e - D r a in Charge T e s t Conditions V D D = 400 V R G = 4.7 ID = 5 A VG S = 10 V Min. Typ. 30 13 70 18 31 48 Max. U n it ns ns nC nC nC
V D D = 640 V I D = 10 A V G S = 10 V R G = 4.7 V G S = 10 V
SWITCHING OFF
Sy m b o l tr ( V o f f ) tf tc Pa r a m e t e r O f f - vo l t a g e Rise Time F a l l Time C r o s s - o v e r Time T e s t Conditions V D D = 640 V ID = 10 A R G = 4.7 V G S = 10 V Min. Typ. 26 23 37 Max. U n it ns ns ns
SOURCE DRAIN DIODE
Sy m b o l IS D I S DM (· ) V S D () t rr Q rr I R RM Pa r a m e t e r S o u r c e - d ra in Current S o u r c e - d ra in Current (pulsed) F o r w a r d On Voltage R e v e r s e Recovery Time R e v e r s e Recovery Charge R e v e r s e Recovery Current I S D = 10 A V GS = 0 900 9 20 I S D = 10 A di/dt = 100 A/µs V D D = 100 V T j = 150 o C T e s t Conditions Min. Typ. Max. 10 40 1.6 U n it A A V ns µC A
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
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