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Part: TPI
Category:
Power Management
-> Protection and Isolation
-> ASD for Telecom Wireline
Description: Tribalanced Protection For Isdn Interfaces - (ASD)
Company: ST Microelectronics, Inc.
Datasheet: Download TPI datasheet File size : 46 kB
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Datasheet text preview:
®
TPI8011N TPI12011N
TRIPOLAR PROTECTION FOR ISDN INTERFACES
Application Specific Discretes A.S.D.TM
FEATURES
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BIDIRECTIONAL TRIPLE CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30 A , 10/1000 µs. BREAKDOWN VOLTAGE: TPI80xxN : 80V TPI120xxN : 120V. AVAILABLE IN SO-8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE : TPI80N : 150V TPI120 : 200V
SO-8
DESCRIPTION Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple TRISIL with low capacitance. These devices provide : - low capacitance from lines to ground, allowing high speed transmission without signal attenuation. - good capacitance balance between lines in order to ensure longitudinal balance. - fixed breakdown voltage in both common and differential modes. - the same surge current capability in both common and differential modes. - A particular attention has been given to the internal wire bonding. The "4-point" configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K17 - K20 VDE 0433 VDE 0878 CNET 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs 0.5/700 µs 0.2/310 µs 1.5 38 2 50 1.5 40 1.5 38 kV A kV A kV A kV A SCHEMATIC DIAGRAM
Tip GND GND Ring
1 2 3 4
8 7 6 5
Tip GND GND R i ng
TM: ASD is a trademark of STMicroelectronics.
August 2001- Ed : 3A
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TPI8011N/TPI12011N
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 µs 5/320 µs 2/10 µs tp = 10 ms t=1s Value 30 40 90 8 3.5 - 55 to + 150 150 260 Unit A
ITSM
Non repetitive surge peak on-state current (F = 50 Hz). Storage temperature range Maximum junction temperature
A
Tstg Tj TL
°C °C
Maximum lead temperature for soldering during 10s
Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs
% I PP 100
tp=1000µs tp=310µs tp=10µs
50
0 tr tp
t
THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter SO-8 Value 170 Unit °C/W
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TPI8011N/TPI12011N
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) Symbol VRM IRM VBR VBO IH IBO IPP VF C Parameter Stand-off voltage Leakage current Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Forward Voltage Drop Capacitance IRM Types max. µA TPI8011N TPI12011N 10 10 V 70 105 @ VRM VBR @ IR min. V 80 120 mA 1 1 VBO max. note1 V 120 180 VBO dyn. typ. note2 V 150 200 IBO max. note1 mA 800 800 IH min. note3 mA 150 150
Note 1 : See the reference test circuit 1. Note 2 : Surge test according to CCITT 1.5kV,10/700 µs between Tip or Ring and ground. Note 3 : See functional holding current test circuit 2.
CAPACITANCES CHARACTERISTICS
LINE A
LINE A CA
TPIxx
CB LINE B
LINE B
CONFIGURATION VA =1V VB =56V VA = 56V VB= 1V
CA (pF) max 70 50
CB (pF) max 50 70
CA - CB (pF) max 30 30
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