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Details, datasheet, quote on part number:VN02ANSP
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Datasheet text preview:
®
VN02ANSP
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE V N 0 2 AN S P
s
VD SS 60 V
R DS ( on) 0.35
I OU T 7A
V CC 36 V
s s s s s
OUTPUT CURRENT (CONTINUOUS): 7A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT FAST DEMAGNETIZATION OF INDUCTIVE LOAD
10
1
DESCRIPTION The VN02ANSP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The diagnostic output indicates an over temperature status. Fast turn-off of inductive load is achieved by negative (-18 V) load voltage at turn-off. BLOCK DIAGRAM
PowerSO-10TM
July 1998
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VN02ANSP
ABSOLUTE MAXIMUM RATING
Sy m b o l V (BR )DSS IOUT IR IIN -V C C I S TA T VESD Ptot Tj Tstg P a r a me t e r D r a in - S o ur c e Breakdown Voltage O u t p ut Current (cont.) R e v e r se Output Current I n p ut Current R e v e r se Supply Voltage S t a t us Current (sink) E l e ct r o s t at i c Discharge (1.5 k, 100 pF) P o w e r Dissipation at T c 25 C J u n c t io n Operating Temperature S t o ra g e Temperature
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Va l u e 60 7 -7 ±10 -4 ±10 20 0 0 31 - 4 0 to 150 - 5 5 to 150
Unit V A A mA V mA V W
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C C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
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VN02ANSP
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-case T h e r m al Resistance Junction-ambient ($) Max Max 4 50
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C/W C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase = 25 oC unless otherwise specified) POWER
Sy m b o l V CC * Ron IS P a r a m et e r S u p p ly Voltage O n State Resistance S u p p ly Current
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T e s t Conditions - 4 0 C < T j < 125 C I O UT = 3 A I O UT = 1 A V C C = 30 V T j = 125 o C
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Min. 7
Typ.
M a x. 36 0 . 35 0.6 1 9 7
Unit V mA mA mA
Off State V C C = 30 V O n State VC C = 30 V O n State VC C = 30 V T j = 125 o C
SWITCHING
Sy m b o l t d(on) tr t d(of f ) tf (d i / d t) o n (d i / d t) o f f V D EMAG P a r a m et e r T u r n -o n Delay Time Of O u t p ut Current R i s e Time Of Output C u r re n t T u r n -o f f Delay Time Of O u t p ut Current F a l l Time Of Output C u r re n t T u r n -o n Current Slope T u r n -o f f Current Slope I n d uc t i v e Load Clamp V o l ta g e T e s t Conditions I O U T = 3 A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 3 A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 3 A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 3 A Resistive Load I n p ut Rise Time < 0.1 µs I O UT = 3 A I O UT = IO V I O UT = 3 A I O UT = IO V I O UT = 3 A 25 C < T j < 125 C 25 o C < T j < 125 o C 25 o C < T j < 125 o C 25 o C < T j < 125 o C -40 o C < T j < 125 o C -2 4 -18
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Min.
Typ. 15 15 14 4.5
M a x.
Unit µs µs µs µs
0.5 1 1.5 4 - 14
A/µs A/µs A/µs A/µs V
LOGIC INPUT (-40 oC Tj 125 oC unless otherwise specified)
Sy m b o l VIL VI H V I ( h y st . ) IIN P a r a m et e r I n p ut Low Level V o l ta g e I n p ut High Level V o l ta g e I n p ut Hysteresis V o l ta g e I n p ut Current VIN = 5 V VIN = 2 V V I N = 0.8 V I I N = 10 mA I I N = -10 mA 2 0.5 250 25 5.5 6 -0.7 - 0 .3 600 300 T e s t Conditions Min. Typ. M a x. 0.8 ( *) Unit V V V µA µA µA V V
VICL
I n p ut Clamp Voltage
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