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Part: VN31SP

Category:
 Others
             -> VIPower (Vertical Intelligent Power)

Description: ISO High Side Smart Power Solid State Relay

Company: ST Microelectronics, Inc.

Datasheet: Download VN31SP datasheet     File size : 105 kB

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Datasheet text preview:
®
VN31SP
HIGH SIDE SMART POWER SOLID STATE RELAY
T Y PE V N 3 1 SP
s
V DS S 60 V
R DS ( on) 0 .0 3
I n ( *) 1 1 .5 A
VCC 26 V
s s s s s
s
MAXIMUM CONTINUOUS OUTPUT CURRENT (#):31 A @ Tc=85oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION
10
1
PowerSO-10TM
DESCRIPTION The VN31SP is a monolithic device made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state, and in on state, output shorted to BLOCK DIAGRAM
VCC and overtemperature. Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off.
(*) In = Nominal current according to ISO definition for high side automotive switch (see note 1) (#) The maximum continuous output current is the the current at Tc = 85 oC for a battery voltage of 13V which does not activate self protection.
July 1998
1/9
VN31SP
ABSOLUTE MAXIMUM RATING
Sy m b o l V (BR )DSS IOUT IR IIN -V C C I S TA T VESD Ptot Tj Tstg P a r a m et e r D r a in - S o ur c e Breakdown Voltage O u t p ut Current (cont.) at T c = 85 o C R e v e r se Output Current at T c = 85 C I n p ut Current R e v e r se Supply Voltage S t a t us Current E l e ct r o s t at i c Discharge (1.5 k, 100 pF) P o w e r Dissipation at T c = 85 C J u n c t io n Operating Temperature S t o ra g e Temperature
o o
Value 60 31 -31 ±10 -4 ±10 2000 54 -4 0 to 150 -5 5 to 150
Unit V A A mA V mA V W
o o
C C
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
2/9
VN31SP
THERMAL DATA
R t h j - c a se R t hj- amb T h e r m al Resistance Junction-case T h e r m al Resistance Junction-ambient ($) Max Max 1.2 50
o o
C/W C/W
($) When mounted using minimum recommended pad size on FR-4 board
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 Tj 125 oC unless otherwise specified) POWER
Sy m b o l VC C In ( * ) R on IS V D S(MAX) P a r a m et e r S u p p ly Voltage N o m i n al Current O n State Resistance S u p p ly Current T c = 85 C I O U T = 11.5 A I O U T = 11.5 A Off State O n State
o
T e s t Conditions V D S ( o n ) 0.5 (note 1) T j = 25 o C
Min. 5.5 11 . 5
Typ. 13
M a x. 26
Unit V A µA mA V
0 . 06 0 . 03 50 15 1.5
T j 25 o C T c = 85 o C
M a x i m u m Voltage Drop I O U T = 25 A
SWITCHING
Sy m b o l t d ( o n ) (^ ) t r( ^) t d ( o f f ) (^ ) tf ( ^ ) (d i / d t) o n (d i / d t) o f f Vdem ag P a r a m et e r T u r n -o n Delay Time Of O u t p ut Current R i s e Time Of Output C u r re n t T u r n -o f f Delay Time Of O u t p ut Current F a l l Time Of Output C u r re n t T u r n -o n Current Slope T u r n -o f f Current Slope I n d uc t i v e Load Clamp V o l ta g e T e s t Conditions I O U T = 11.5 A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 11.5A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 11.5 A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 11.5 A Resistive Load I n p ut Rise Time < 0.1 µs I O U T = 11.5 A I O UT = IO V I O U T = 11.5 A I O UT = IO V I O U T = 11.5 A L = 1 mH -2 4 Min. Typ. 90 100 140 50 0.08 0.2 -18 0.5 1 3 3 - 14 M a x. Unit µs µs µs µs A/µs A/µs A/µs A/µs V
LOGIC INPUT
Sy m b o l VIL VI H V I ( h y st . ) IIN P a r a m et e r I n p ut Low Level V o l ta g e I n p ut High Level V o l ta g e I n p ut Hysteresis V o l ta g e I n p ut Current VIN = 5 V VIN = 2 V V I N = 0.8 V I I N = 10 mA I I N = -10 mA 2 0.5 250 25 5.5 6 -0.7 - 0 .3 500 250 T e s t Conditions Min. Typ. M a x. 0.8 (· ) Unit V V V µA µA µA V V
VICL
I n p ut Clamp Voltage
3/9


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