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Details, datasheet, quote on part number:VND670SP
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| Part: | VND670SP |
| Category: | Others => VIPower (Vertical Intelligent Power) |
| Description: | Dual High Side Switch With Dual Power MOS Gate Driver (BRIDGE CONFIGURATION) |
| Company: | ST Microelectronics, Inc. |
| Datasheet: | Download VND670SP datasheet File size : 226 kB |
| Request For quote: | Find where to buy VND670SP
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Datasheet text preview:
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VND670SP
DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER (BRIDGE CONFIGURATION)
TYPE VND670SP
s s s
RDS(on) 30 m
IOUT 15 A
VDSS 40 V
OUTPUT CURRENT:15A PER CHANNEL
10
5V LOGIC LEVEL COMPATIBLE INPUTS GATE DRIVE FOR TWO EXTERNAL POWER MOS s UNDERVOLTAGE AND OVERVOLTAGE SHUT-DOWN s OVERVOLTAGE CLAMP s THERMAL SHUT DOWN s CROSS-CONDUCTION PROTECTION s CURRENT LIMITATION s VERY LOW STAND-BY POWER CONSUMPTION s PWM OPERATION UP TO 10 KHz s PROTECTION AGAINST: LOSS OF GROUND AND LOSS OF VCC s REVERSE BATTERY PROTECTION (*) DESCRIPTION The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge
BLOCK DIAGRAM
1
PowerSO-10TM
configuration. The device integrates two 30 m Power MOSFET in high side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brake; DIAGA/ENA, DIAGB/ENB allow to disable one half bridge and feedback diagnostic. Built-in thermal shut-down, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.
V CC
Un de rvolt. IN A
IN TERN AL SUPPLY OUTA
I NB LOGI C
Short to battery
D IAGA/ENA
Short to battery D IAGB/EN B
OU TB
GATEA PWM Overt emp. A Overtemp. B Cu rren t Limit er B Cu rre nt Limiter A G ND GATEB
(*) See note at page 5
January 2003
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VND670SP
ABSOLUTE MAXIMUM RATING
Symbol VCC Imax1 Imax2 IR IIN IEN Ipw Igs VESD Tj TSTG Parameter Supply voltage Maximum output current (continuous) Maximum output current (250 ms pulse duration) Reverse output current (continuous) Input current Enable pin current PWM pin current Output gate current Electrostatic discharge (R=1.5k, C=100pF) Junction operating temperature Storage temperature Value -0.3 .. 40 15 20 -15 +/- 10 +/- 10 +/- 10 +/- 20 2000 -40 to 150 -55 to 150 Unit V A A A mA mA mA mA V °C °C
CURRENT AND VOLTAGE CONVENTIONS
ICC IINA IINB IENA IENB INA INB DIAGA/ENA DIAGB/ENB PWM Ipw IGND VCC VCC OUTA OUTB GATE A GATE B GND VgsB IgsB VgsA IgsA VOUTB IOUTB VOUTA IOUTA
VINA VINB VENA VENB
Vpw
CONNECTION DIAGRAM (TOP VIEW)
INPUT B DIAGB/ENB PWM DIAGA/ENA INPUT A
6 7 8 9 10 11 VCC
5 4 3 2 1
OUTPUT B GATE B GROUND GATE A OUTPUT A
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VND670SP
THERMAL DATA
Symbol Rthj-case Rthj-amb (*) Parameter Thermal resistance junction-case (per channel) Thermal resistance junction-ambient (MAX) (MAX) Value 1.4 50 Unit °C/W °C/W
(*) When mounted using the recommended pad size on FR-4 board (See AN515 Application Note).
ELECTRICAL CHARACTERISTICS (VCC=9V up to 18V; -40°CSymbol VCC RON Is Vgate Vgs,cl Parameter Operating supply voltage On state resistance Supply current Gate output voltage Gate output clamp voltage Test Conditions ILOAD=12A ILOAD=12A; Tj=25oC ON state OFF state Igs=-1 mA 5.0 6.0 6.8 26 Min 5.5 Typ Max 36 50 30 15 40 8.5 8.0 Unit V m m m µA V V
SWITCHING (VCC=13V, RLOAD =1.1)
Symbol tD(on) tD(off) tr tf (dVOUT/dt)on (dVOUT/dt)off tdong trg tdoffg tfg tdel Parameter Turn-on delay time Turn-off delay time Output voltage rise time Output voltage fall time Turn-on voltage slope Turn-off voltage slope VgsTurn-on delay time Vgs rise time VgsTurn-off delay time Vgs fall time External MOSFET turn-on dead time Test Conditions Min Typ 50 45 50 40 160 230 0.5 2.6 1.0 2.2 600 Max 150 135 150 120 500 1200 2 10 5.0 10 1800 Unit µs µs µs µs V/ms V/ms µs µs µs µs µs
Input rise time < 1µs (see fig. 1)
C1=4.7nF Break to ground configuration (see fig. 2) (see fig. 3) 150
PROTECTION AND DIAGNOSTIC
Symbol VUSD VOV ILIM TTSD Vocl Vsat Parameter Undervoltage shut-down Overvoltage shut-down Current limitation Thermal shut-down temperature Output turn-off clamp voltage External MOSFET saturation voltage detection threshold Test Conditions Min 36 30 VIN = 3.25 V ILOAD=12A, L=6mH 150 VCC-55 2.5 4.2 Typ 43 45 170 200 VCC-41 5 .5 Max 5 .5 Unit V V A °C V V
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