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Part: VND7N04-1
Category:
Others
-> VIPower (Vertical Intelligent Power)
Description: "OMNIFET" Fully Autoprotected Power MOSFET
Company: ST Microelectronics, Inc.
Datasheet: Download VND7N04-1 datasheet File size : 195 kB
Request For quote: Find where to buy VND7N04-1
Datasheet text preview:
®
VND7N04/VND7N04-1 VNP7N04FI/K7N04FM
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
T YP E V N D 7N 0 4 V N D 7N 0 4 - 1 V N P7 N 0 4 F I V N K7 N 0 4 F M
s s s s s s
Vc l a m p 42 42 42 42 V V V V
R DS (o n) 0 .1 4 0.14 0 .1 4 0 .1 4
Ilim 7 7 7 7 A A A A
3
3 2 1
s s
s
LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET
1
DPAK TO-252
IPAK TO-251
3 1 2
DESCRIPTION The VND7N04, VND7N04-1, VNP7N04FI and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh BLOCK DIAGRAM
ISOWATT220
SOT82-FM
enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
February 2000
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VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM
ABSOLUTE MAXIMUM RATING
S y mb o l P ar a m e te r D PA K IP A K V DS V in ID IR Ves d Ptot Tj Tc T st g D r a in - s o u rc e Voltage (V i n = 0) I n p u t Voltage D r a in Current R e v e r se DC Output Current E l e c tr o s t at i c Discharge (C= 100 pF, R = 1 . 5 K) T o t a l Dissipation at T c = 25 o C O p e r at i n g Junction Temperature C a s e Operating Temperature S t o ra g e Temperature 60 Value IS O W A T T 2 2 0 I nt e r na l l y Clamped 18 I n te r n a ll y Limited -7 2000 24 I n te r n a ll y Limited I n te r n a ll y Limited - 55 to 150 9 S O T - 82 F M V V A A V W
o o o
Unit
C C C
THERMAL DATA
D P A K / I PA K R t h j - c a s e T h e r m al Resistance Junction-case Max R t h j-a mb T h e r m al Resistance Junction-ambient Max 3.75 100 ISOWATT220 5.2 62.5 SO T 8 2 - F M 14 100
o
C/W C/W
o
ELECTRICAL CHARACTERISTICS (-40 < Tj < 125 oC unless otherwise specified) OFF
Sy m b o l V C LAMP V CLT H V I N CL I DS S II S S P a r a m et e r D r a in - s o ur c e Clamp V o l ta g e D r a in - s o ur c e Clamp T h r e sh o l d Voltage I n p ut - S o ur c e Reverse C l a m p Voltage Z e r o Input Voltage D r a in Current (V i n = 0) S u p p ly Current from I n p ut Pin T e s t Conditions I D = 200 mA I D = 2 mA I i n = -1 mA V D S = 13 V V D S = 25 V VDS = 0 V V in = 0 V in = 0 V i n = 10 V 250 V in = 0 Vin = 0 Min. 32 31 -1 . 1 - 0 .2 5 75 200 550 Typ. 42 M a x. 52 Unit V V V µA µA µA
ON ()
Sy m b o l V I N (t h) R DS ( on) P a r a m et e r I n p ut Threshold V o l ta g e S t a t ic Drain-source On R e s i s ta n c e V D S = Vi n T e s t Conditions I D + Ii n = 1 mA A A A A Min. 0.8 Typ. M a x. 3 0 . 14 0 . 28 0 . 28 0 . 56 Unit V
V i n = 10 V I D = 3.5 Vin = 5 V I D = 3.5 - 4 0 < T j < 25 o C V i n = 10 V I D = 3.5 Vin = 5 V I D = 3.5 T j = 125 o C
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VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM
ELECTRICAL CHARACTERISTICS (continued) DYNAMIC
Sy m b o l g f s () C o ss P a r a m et e r F o r w a rd T r a n sc o n d u c ta n c e O u t p ut Capacitance T e s t Conditions V D S = 13 V V D S = 13 V I D = 3.5 A f = 1 MHz Vi n = 0 Min. 2 Typ. 5 250 500 M a x. Unit S pF
SWITCHING (**)
Sy m b o l t d(on) tr t d(of f ) tf t d(on) tr t d(of f ) tf (d i / d t) o n Qi P a r a m et e r T u r n -o n Delay Time R i s e Time T u r n -o f f Delay Time F a l l Time T u r n -o n Delay Time R i s e Time T u r n -o f f Delay Time F a l l Time T u r n -o n Current Slope T o t a l Input Charge T e s t Conditions V D D = 15 V V g e n = 10 V ( s e e figure 3) V D D = 15 V V g e n = 10 V ( s e e figure 3) V D D = 15 V V i n = 10 V V D D = 12 V I d = 3.5 A R g e n = 10 Min. Typ. 50 60 130 50 140 0.4 2.5 1 50 18 M a x. 150 180 300 200 500 1.1 7 4 Unit ns ns ns ns ns µs µs µs A/µs nC
I d = 3.5 A R g e n = 1000
I D = 3.5 A R g e n = 10 I D = 3.5 A V i n = 10 V
SOURCE DRAIN DIODE
Sy m b o l V S D () t r r () Q r r () I R R M () P a r a m et e r F o r w a rd On Voltage R e v e r se Recovery Time R e v e r se Recovery C h a r ge R e v e r se Recovery C u r re n t T e s t Conditions I S D = 3.5 A V in = 0 40 0.2 3.6 Min. Typ. M a x. 1.7 Unit V ns µC A
I S D = 3.5 A di/dt = 100 A/µs V D D = 30 V T j = 25 o C ( s e e test circuit, figure 5)
PROTECTION
Sy m b o l I li m t d l i m () T j s h () T j r s () I g f () E a s () P a r a m et e r D r a in Current Limit S t e p Response C u r re n t Limit O v e r te m p e r at u r e S h u t do w n O v e r te m p e r at u r e Reset F a u lt Sink Current S i n gl e Pulse A v a la n c h e Energy V i n = 10 V Vin = 5 V V D S = 13 V V D S = 13 V
o
T e s t Conditions V i n = 10 V Vin = 5 V V i n = 10 V Vin = 5 V V D S = 13 V V D S = 13 V
Min. 4 4
Typ. 7 7 13 15
M a x. 11 11 20 25
Unit A A µs µs
o
150 135 50 20 0.4
C C
o
mA mA J
s t a rt i n g T j = 25 C V D D = 20 V V i n = 10 V R g e n = 1 K L = 30 mH
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % () Parameters guaranteed by design/characterization
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Others parts begin by vn
VN-1 VN-2 VN-3
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