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Details, datasheet, quote on part number:WS57C128FB-45L
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Datasheet text preview:
WS57C128FB HIGH SPEED 16K x 8 CMOS EPROM
KEY FEATURES
· Very Fast Access Time
-- 35 ns
· Standard EPROM Pinout · DIP and Surface Mount Packaging
Available
· Low Power Consumption · EPI Processing
-- Latch-up Immunity Up to 200 mA
GENERAL DESCRIPTION
The WS57C128FB is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is manufactured with an advanced CMOS technology which enables it to operate at Bipolar speeds while consuming only 90 mA. Two major features of the WS57C128FB are its Low Power and High Speed. These features make it an ideal solution for applications which require fast access times, low power, and non-volatility. Typical applications include systems which do not utilize mass storage devices and/or are board space limited. The WS57C128FB is configured in the standard EPROM pinout which provides an easy upgrade path for systems which are currently using standard EPROMs. The EPROMs are available in both 600 Mil DIP packages, and both J-leaded and leadless surface mount packages.
MODE SELECTION
PINS MODE Read Output Disable Standby Program Program Verify Program Inhibit PGM X X X VIL VI H X CE VI L X VI H VIL VIL VIH OE VI L VIH X VI H VIL X VPP VC C VC C VC C VPP VPP VPP VCC OUTPUTS
PIN CONFIGURATION
TOP VIEW Chip Carrier
VC C VCC VCC VC C VCC High Z High Z DIN DOUT High Z
A6 A5 A4 A3 A2 A1 A0 NC O0 A7 A12 VPP NC VCC PGM A13
CERDIP
VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VC C PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3
VC C
DOUT
X can be VIL or VIH.
32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O1 O2
GND
432
A8 A9 A11 NC OE A10 CE O7 O6
NC O3 O4 O5
PRODUCT SELECTION GUIDE
PARAMETER Address Access Time (Max) Chip Select Time (Max) Output Enable Time (Max) WS57C128FB-35 35 ns 35 ns 20 ns WS57C128FB-45 45 ns 45 ns 25 ns WS57C128FB-55 55 ns 55 ns 25 ns WS57C128FB-70 70 ns 70 ns 25 ns
Return to Main Menu
3-7
WS57C128FB
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature....65° to + 150°C Voltage on any Pin with Respect to Ground ... 0.6V to +7V VPP with Respect to Ground..........0.6V to + 13V ESD Protection ........> 2000V
*NOTICE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability.
OPERATING RANGE
RANGE Commercial Industrial Military TEMPERATURE 0°C to +70°C 40°C to +85°C 55°C to +125°C VCC +5V ± 10% +5V ± 10% +5V ± 10%
DC READ CHARACTERISTICS Over Operating Range with VPP = VCC
SYMBOL VIL VIH VOL VOH ISB1 ISB2 ICC1 PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Standby Current (CMOS) VCC Standby Current (TTL) VCC Active Current (CMOS) TEST CONDITIONS (Note 5) (Note 5) IOL = 16 mA IOH = 4 mA (Notes 1 and 3) (Notes 2 and 3) (Notes 1 and 4) Outputs Not Loaded (Notes 2 and 4) Outputs Not Loaded VPP = VCC VCC 0.4 VIN = 5.5V or Gnd VOUT = 5.5 V or Gnd 10 10 Comm'l Industrial Military Comm'l Industrial Military 2.4 500 15 30 40 40 50 60 60 100 VCC 10 10 MIN 0.1 2.0 MAX 0.8 VCC + 0.3 0.4 UNITS V V V V µA mA mA mA mA mA mA mA µA V µA µA
ICC2 IPP VPP ILI ILO
NOTES:
VCC Active Current (TTL) VPP Supply Current VPP Read Voltage Input Leakage Current Output Leakage Current
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL 0.8V, VIH 2.0V. 3. Add 1 mA/MHz for A.C. power component.
4. Add 4 mA/MHz for A.C. power component. 5. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment.
AC READ CHARACTERISTICS Over Operating Range with VPP = VCC
PARAMETER Address to Output Delay CE to Output Delay OE to Output Delay Output Disable to Output Float Address to Output Hold SYMBOL tACC tCE tOE tDF tOH 0 57C128FB-35 57C128FB-45 57C128FB-55
MIN MAX MIN MAX MIN MAX
57C128FB-70
MIN MAX
UNITS
35 35 20 20 0
45 45 25 25 0
55 55 25 25 0
70 70 25 25 ns
3-8
WS57C128FB
AC READ TIMING DIAGRAM
ADDRESSES tACC CE
VALID tOH
tCE OE
tDF
tOE
OUTPUTS
VALID
tDF
CAPACITANCE (6) TA = 25°C, f = 1 MHz
SYMBOL CIN C OUT C VPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance CONDITIONS VI N = 0V VOUT = 0V VPP = 0 V TYP (7) 4 8 18 MAX 6 12 25 UNITS pF pF pF
NOTES: 6. This parameter is only sampled and is not 100% tested. 7. Typical values are for TA = 25°C and nominal supply voltages.
TEST LOAD (High Impedance Test Systems)
A.C. TESTING INPUT/OUTPUT WAVEFORM
97.5 2.01 V D.U.T.
3.0 2.0 0.8 TEST POINTS 2.0 0.8
30 pF (INCLUDING SCOPE AND JIG CAPACITANCE)
0.0
A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Timing measurements are made at 2.0 V for a logic "1" and 0.8 V for a logic "0". NOTE: 8. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures.
3-9
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