Digchip : Database on electronics components
Electronic components database
Search:                      In section:
Member, Distributor  
Log In
Email:
Password:

Details, datasheet, quote on part number:WS57C51C-45L
 
 
Part:WS57C51C-45L
Category:Memory => ROM => OTP ROM
Description:WS57C51C High Speed 16K X 8 CMOS Prom/rPROM
Company:ST Microelectronics, Inc.
Datasheet:Download WS57C51C-45L datasheet   File size : 55 kB
Request For quote:  Find where to buy WS57C51C-45L
 



Datasheet text preview:
WS57C51C
HIGH SPEED 16K x 8 CMOS PROM/RPROM
KEY FEATURES
· Very Fast Access Time
-- 35 ns
· Pin Compatible with Am27S51
and N82HS1281 · Immune to Latch-Up
-- Up to 200 mA
· Low Power Consumption · Fast Programming
· ESD Protection Exceeds 2000 V
GENERAL DESCRIPTION
The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100% tested with worst case test patterns both before and after assembly. The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes need be performed.
BLOCK DIAGRAM
EPROM ARRAY
PIN CONFIGURATION
TOP VIEW Chip Carrier
A6 A7 A8 A9 VCC A10 A11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND
8 A6 - A13 ROW ADDRESSES
ROW DECODER
CERDIP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VC C A10 A11 A12 A13 CS1/VPP CS2 CS3 CS4 O7 O6 O5 O4 O3
131,072 BITS
6 A0 - A5 COLUMN ADDRESSES
COLUMN DECODER
SENSE AMPLIFIERS
CS1/ VPP CS2 CS3 CS4 8
A5 A4 A3 A2 A1 A0 NC O0 O1
32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O2 NC
GND
432
A12 A13 CS1/VPP CS2 CS3 CS4 NC O7 O6
O3 NC O4 O5
OUTPUTS
PRODUCT SELECTION GUIDE
PARAMETER Address Access Time (Max) CS to Output Valid Time (Max) 57C51C-35 35 ns 20 ns 57C51C-45 45 ns 20 ns 57C51C-55 55 ns 25 ns 57C51C-70 70 ns 30 ns
Return to Main Menu
2-47
WS57C51C
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature....­65° to + 150°C Voltage on any Pin with Respect to Ground ...­ 0.6V to +7V VPP with Respect to Ground..........­0.6V to + 14V ESD Protection ........> 2000V
MODE SELECTION
PINS CS1/
MODE Read Output Disable Output Disable Output Disable Output Disable Program Program Verify
VPP CS2 CS3 CS4 VCC OUTPUTS VI L VI H X X X VPP VI L VI L X VI H X X VIH VI L VI H X X VI L X X VI H VI L X X X VI H X VI L VC C VC C VCC VCC VCC VCC VC C DOUT High Z High Z High Z High Z DI N DOUT
*NOTICE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability.
OPERATING RANGE
RANGE Commercial Industrial Military TEMPERATURE 0°C to +70°C ­ 40°C to +85°C ­ 55°C to +125°C VCC +5V ± 10% +5V ± 10% +5V ± 10%
DC READ CHARACTERISTICS Over Operating Range. (See Above)
SYMBOL VIL VIH VOL VOH PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Active Current (CMOS) (Note 3) (Note 3) IOL = 16 mA IOH = ­4 mA VCC = 5.5 V, f = 0 MHz (Note 1), Output Not Loaded Add 4 mA/MHz for AC Operation VCC = 5.5 V, f = 0 MHz (Note 2), Output Not Loaded Add 4 mA/MHz for AC Operation VIN = 5.5V or Gnd VOUT = 5.5 V or Gnd Comm'l Industrial Military Comm'l Industrial Military ­10 ­10 2.4 30 35 35 50 60 60 10 10 TEST CONDITIONS MIN ­0.1 2.0 MAX 0.8 VCC + 0.3 0.4 UNITS V V V V mA mA mA mA mA mA µA µA
ICC1
ICC2
VCC Active Current (TTL) Input Leakage Current Output Leakage Current
ILI ILO
NOTES:
1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL 0.8V, VIH 2.0V. 3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment.
2-48
WS57C51C
AC READ CHARACTERISTICS Over Operating Range. (See Above)
PARAMETER SYMBOL 57C51C-35
MIN MAX
57C51C-45
MIN MAX
57C51C-55
MIN MAX
57C51C-70
MIN MAX
UNITS
Address to Output Delay CS to Output Delay Output Disable to Output Float* Address to Output Hold
tACC tCS tDF tOH 0
35 20 20 0
45 20 20 0
55 25 25 0
70 30 25 ns
*Sampled, Not 100% Tested.
AC READ TIMING DIAGRAM
ADDRESSES
VALID tACC tOH
CSX, CS3 tCS OUTPUTS VALID tDF
2-49