|
Details, datasheet, quote on part number:NGA-386
| |
Datasheet text preview:
Preliminary
Product Description
NGA-386
Sirenza Microdevices NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 5 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.
DC-5000 MHz, Cascadable GaAs HBT MMIC Amplifier
Contact Factory
See Application Note AN-059 for Alternates
Obsolete
Small Signal Gain vs. Frequency
25 20 15
dB
Product Features High Gain: 18.9dB at 1950Mhz Cascadable 50 ohm: 1.2:1 VSWR Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
Units dBm Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz DC - 5000 M Hz DC - 5000 M Hz 2000 M Hz 3.5 30 18.8 Min. Ty p. 14.5 15.0 15.6 25.8 27.0 27.0 20.9 18.9 18.0 5000 1.2:1 1.3:1 2.7 4.0 35 144 4.5 45 23.0 Max.
10 5 0 0
Sy mbol P1dB
1
2
3 4 5 Frequency GHz
Parameter
6
7
Output Pow er at 1dB Compression
OIP3
Output Third Order Intercept Point
dBm
G
Small Signal Gain
dB M Hz dB V mA °C/W
Bandw idth Determined by Return Loss (>10dB)
Input VSWR Output VSWR NF VD ID RTH, j-l Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V RBIAS = 120 Ohms
ID = 35 mA Typ. TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101103 Rev E
ObsoletePreliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT Key parameters, at typical operating frequencies: Test Condition Ty pical 25ºC Parameter (ID = 35mA, unless otherwise noted) Unit
500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 21.3 25.1 14.6 26.8 23.6 20.9 25.8 14.5 24.8 23.4 18.9 27.0 15.0 22.0 22.2 18.0 27.0 15.6 21.0 21.6 dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Absolute Maximum Ratings
Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ)
Operati ng Temp. Range (TL)
Absolute Limit 70 mA 6V +10 dBm
+150°C -40°C to +85°C +150°C
Max. Storage Temp.
Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-101103 Rev E
ObsoletePreliminary NGA-386 DC-5.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25ºC
S21, ID =35mA, T=25ºC
S12, ID =35mA, T=25ºC
25 20 15
dB dB
0 -5 -10 -15 -20 -25 -30
0 1 2 3 4 5 6 7
10 5 0
Frequency GHz S11, ID =35mA, T=25ºC
0
1
2
3
4
5
6
7
Frequency GHz S22, ID =35mA, T=25ºC
0 -5 -10
dB -15 dB
0 -5 -10 -15 -20 -25 -30
0 1 2 3 4 5 6 7
-20 -25 -30
Frequency GHz
0
1
2
3
4
5
6
7
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101103 Rev E
|
|
