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Details, datasheet, quote on part number:NGA-586
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Product Description
NGA-586
Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A D a r l i n g t o n configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.
G ain & Return Loss vs. Freq. @T L= + 25°C 24
G AIN
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Pending Obsolescence
Last Time Buy Date: July 10, 2003
See Application Note AN-059 for Alternates
Product Features
High Gain : 18.6 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Operates From Single Supply Low Thermal Resistance Package
0
20 Gain (dB)
I RL
- 10
Return Loss (dB)
16
OR L
- 20
Applications
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
Units dB dBm dBm M Hz dB dB dB V mA °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 72 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 17.8 Ty p. 19.8 18.6 17.9 18.9 18.5 39.6 34.0 5500 14.9 19.5 3.5 4.9 80 121 5.4 88 Max. 21.8
12
- 30
8 0 1 2 3 4 Fr equency (GHz) 5 6
- 40
Sy mbol G P1dB OIP3
Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point
Bandw idth Determined by Return Loss (>10dB)
IRL ORL NF VD ID RTH, j-l
Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
VS = 8v RBIAS = 39 Ohms ID = 80mA Typ. TL = 25ºC
Test Conditions:
IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101105 Rev. H
Pr Pending Obsolescence eliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Sy mbol Parameter Unit 100 500 850 1950 2400 3500
G OIP3 P1dB IRL ORL S21 NF
Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
VS = 8 V RBIAS = 39 Ohms
dB dBm dBm dB dB dB dB
20.5 37.7 20.1 29.3 35.9 22.7 3.7
20.1 38.6 19.0 21.3 33.8 22.7 3.5
19.8 39.6 18.9 17.7 28.7 22.6 3.4
18.6 34.0 18.5 14.9 19.5 22.1 3.5
17.9 32.0 17.9 15.4 19.6 21.9 3.5
15.5 27.4 13.7 15.8 25 21.1 3.6
Test Conditions:
ID = 80 mA Typ. TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
Noise Figure vs. Frequency
VD= 4.9 V, ID= 80 mA
5.0 4.5 Noise Figure (dB) 4.0 3.5 3.0 2.5 2.0 0.0 0.5 1 .0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz)
Absolute Maximum Ratings
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Absolute Limit
120 mA
6V +15 dBm
+150°C -40°C to +85°C +150°C
TL=+25ºC
Max. RF Input Pow er Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
VD= 4.9 V, ID= 80 mA
P1dB vs. Frequency
VD= 4.9 v, ID= 80 mA
45 40 OIP3 (dBm) 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz)
22
TL
P1dB (dBm)
+25°C -40°C +85°C
20 18 16 14 12 10 0 0.5 1 1.5 2
TL
+25°C -40°C +85°C
2.5
3
3.5
Frequency (GHz)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101105 Rev. H
Pr Pending Obsolescence eliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
S21 vs. Frequency S11 vs. Frequency
25
VD= 4.9 v, ID= 80 mA
0
VD= 4.9 v, ID= 80 mA
20 S21(dB)
TL
+25°C -40°C +85°C
-5 - 10 S11(dB) - 15 - 20
TL
+2 5 ° C -40°C +8 5 ° C
15
10
- 25
5 0 1 2 3 4 F requenc y (GHz) 5 6
- 30 0 1 2 3 4 Frequenc y (GHz) 5 6
-1 5 -1 7 S12(dB) -1 9 -2 1 -2 3 -2 5 0 1
VD= 4.9 v, ID= 80 mA
S12 vs. Frequency
-5 - 10 - 15 S22(dB) - 20 - 25 - 30 - 35
VD= 4.9 v, ID= 80 mA
S22 vs. Frequency TL
TL
+25°C -40°C +85°C
+2 5 ° C -40°C +8 5 ° C
2 3 4 Frequency (GHz)
5
6
0
1
2 3 4 Frequenc y (GHz)
5
6
VD vs. ID over Temperature for fixed VS= 8 v, RBIAS= 39 ohms *
95 90
VD(Volts) 5.3 5.1
+85°C +25°C
VD vs. Temperature for Constant ID = 80 mA
85 ID(mA) 80 75 70 65 4.6
4.9 4.7 4.5 4.3
-40°C
4.7
4.8 4.9 VD(Volts)
5.0
5.1
- 40
-15
10 35 T emperature(°C)
60
85
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101105 Rev. H
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