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Details, datasheet, quote on part number:NGA-589
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Datasheet text preview:
Product Description
Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA589 typically provides +39 dBm output IP3, 20 dB of gain, and +19 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @T L=+25°C 24
GAIN
NGA-589
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Contact Factory
See Application Note AN-059 for Alternates
Obsolete
Product Features
High Gain : 19.2 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Operates From Single Supply Low Thermal Resistance Package
0 -10
IRL
Return Loss (dB)
18 Gain (dB) 12
ORL
-20 -30 -40 0 1 2 3 4 Frequency (GHz) 5 6
Applications
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
Units dB dBm dBm M Hz dB dB dB V mA °C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 72 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 18.0 Ty p. 20.0 19.2 18.9 19.0 18.8 39.0 34.0 5500 15.5 18.0 3.7 4.9 80 111 5.3 88 Max. 22.0
6 0
Sy mbol G P1dB OIP3
Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point
Bandw idth Determined by Return Loss (>10dB)
IRL ORL NF VD ID RTH, j-l
Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
VS = 8 V RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25ºC
Test Conditions:
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100376 Rev D
Preliminary Obsolete NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Sy mbol Parameter Unit 100 500 850 1950 2400 3500
G OIP3 P1dB IRL ORL S12 NF
Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure
dB dBm dBm dB dB dB dB
20.5 37.7 18.3 27.0 20.9 22.6 3.8
20.3 38.8 19.0 24.5 21.4 22.7 3.6
20.0 39.0 19.0 21.8 22.1 22.8 3.5
19.2 34.0 18.8 15.5 18.0 23.2 3.7
19.0 31.4 17.6 13.2 15.9 23.4 3.6
18.4 27.7 15.4 11.7 19.3 24.0 3.8
VS = 8 V Test Conditions: RBIAS = 39 Ohms
ID = 80 mA Typ. TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
Absolute Maximum Ratings Noise Figure vs. Frequency
7 Noise Figure (dB) 6 5 4 3 2
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Absolute Limit
120 mA
VD= 4.9 V, ID= 80 mA
6V +15 dBm
+150°C -40°C to +85°C +150°C
TL = 25ºC
Operating Temp. Range (TL)
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one.
0
0.5
1
1.5 2 2.5 Frequency (GHz)
3
3.5
Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
45 40 OIP3(dBm) 35 30 25 20 15 0 0.5 1 1.5 2 2.5 Frequency (GHz) 3 3.5
VD= 4.9 V, ID= 80 mA
P1dB vs. Frequency
22
VD= 4.9 V, ID= 80 mA
+25°C -40°C +85°C
TL
20 P1dB (dBm) 18 16 14 12 10 0 0.5 1
TL
+25°C -40°C +85°C
1.5 2 2.5 Frequency (GHz)
3
3.5
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100376 Rev D
Preliminary Obsolete NGA-589 DC-5.5 GHz Cascadable MMIC Amplifier
|S | vs. Frequency
24
VD= 4.9 V, ID= 80 mA
21
|S | vs. Frequency
0 -10 S11 (dB) -20 -30
VD= 4.9 V, ID= 80 mA
11
18 S21 (dB)
12
6
TL
0 0 1 2 3 4 Frequency (GHz) 5
+25°C -40°C +85°C
TL
-40
6
+25°C - 40°C +85°C
0
1
2 3 4 Frequency (GHz)
5
6
|S | vs. Frequency
-10
VD= 4.9 V, ID= 80 mA
12
|S | vs. Frequency
+25°C -40°C +85°C
0 -10 S22 (dB) -20 -30
VD= 4.9 V, ID= 80 mA
22
TL
-15 S12 (dB)
-20 -25
TL
-30 0 1 2 3 4 Frequency (GHz) 5 6
-40 0 1 2 3 4 Frequency (GHz) 5
+25°C -40°C +85°C
6
VD vs. ID over Temperature for fixed VS= 8 V, RBIAS= 39 Ohms *
95 90
+25°C -40°C
VD vs. Temperature for Constant ID = 80 mA
5.50 5.35
80 75 70 65
+85°C
VD (Volts)
ID (mA)
85
5.20 5.05 4.90 4.75 4.60
4.6
4.8
4.9 VD (Volts)
5.1
5.2
-40
-15
10 35 Temperature (°C)
60
85
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100376 Rev D
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