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Details, datasheet, quote on part number:NGA-686
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Datasheet text preview:
Preliminary
Product Description
Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up to 6 Ghz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products.
NGA-686
DC-6000 MHz, Cascadable GaAs HBT MMIC Amplifier
Pending Obsolescence
Last Time Buy Date: July 10, 2003
See Application Note AN-059 for Alternates
Small Signal Gain vs. Frequency
25 20 15
dB
Product Features 11.4dB Gain, 19.2 dBm P1dB at 1950Mhz Cascadable 50 ohm: 1.2:1 VSWR Operates from Single Supply Low Thermal Resistance Package Unconditionally Stable Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite
Units dBm Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 2400 M Hz DC - 6000 M Hz DC - 6000 M Hz 2000 M Hz 5.3 72 10.7 Min. Ty p. 19.8 19.2 17.9 38.4 34.9 32.7 11.9 11.4 11.2 5800 1.2:1 1.3:1 6.1 5.8 80 121 6.3 88 13.1 Max.
10 5 0 0
Sy mbol P1dB
1
2
3 4 5 Frequency GHz
Parameter
6
7
8
Output Pow er at 1dB Compression
OIP3
Output Third Order Intercept Point
dBm
G
Small Signal Gain
dB M Hz dB V mA °C/W
Bandw idth Determined by Return Loss (>10dB)
Input VSWR Output VSWR NF VD ID RTH, j-l Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V RBIAS = 27 Ohms
ID = 80 mA Typ. TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-101106 Rev E
Prelimi Pending Obsolescencenary NGA-686 DC-6.0 GHz 5.9V GaAs HBT Key parameters, at typical operating frequencies: Ty pical Test Condition Parameter 25ºC (ID = 80mA, unless otherwise noted) Unit
500 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Isolation 11.9 38.5 19.9 21.4 19.7 11.9 38.4 19.8 20.7 19.8 11.4 34.9 19.2 18.4 19.7 11.2 32.7 17.9 17.6 19.7 dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB dB dBm dBm dB dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Absolute Maximum Ratings
Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Absolute Limit
120 mA
7V +13 dBm
+150°C -40°C to +85°C +150°C
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-101106 Rev E
Prelimi Pending Obsolescencenary NGA-686 DC-6.0 GHz 5.9V GaAs HBT
S-parameters over frequency, at 25ºC
S21, ID =80mA, T=25ºC
S12, ID =80mA, T=25ºC
25 20 15
dB
0 -5 -10
dB
10 5 0 0 1 2 3 4 5 6 7 8
Frequency GHz S11, ID =80mA, T=25ºC
-15 -20 -25 0 1 2 3 4 5 6 7 8
Frequency GHz S22, ID =80mA, T=25ºC
0 -5 -10
dB dB
0 -5 -10 -15 -20 -25
0 1 2 3 4 5 6 7 8
-15 -20 -25
Frequency GHz
0
1
2
3
4
5
6
7
8
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-101106 Rev E
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