|
Details, datasheet, quote on part number:XD010-14S
| |
Datasheet text preview:
Preliminary
Product Description
The XD010-14S-D4F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of GSM and EDGE RF power amplifiers. The matching structures are designed to minimize the EVM at typical operating levels. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range.
Functional Block Diagram
XD010-14S-D4F
925-960 MHz Class A/AB 10W Power Amplifier Module
Product Features
Temperature Compensation
· · · · · · ·
4
50 W RF impedance 15W Output P1dB Single Voltage Operation High Gain: 32 dB Typical High Peak Power for Lower BER Advanced, XeMOS II LDMOS FETS Ultra-low EVM
1
2
3
Applications
RF in
28 VDC
Case Flange = Ground
28 VDC
RF out
· · ·
Base Station PA driver Repeater GSM / EDGE
Key Specifications
P a ra me te r Frequency P1dB Gain Gain Flatness IRL Efficiency Linearity Delay Phase Linearity RTH, j-l RTH, j-2 Description: Test Conditions Zin = Zout = 50, VDD = 28.0V, IDD1 = 230mA, IDD2 = 158mA, TFlange = 25ºC Frequency of Operation Output Power at 1dB Compression (single tone) Gain at 6W Output Power (CW) Peak to Peak Gain Variation Input Return Loss 6W CW Drain Efficiency at 12W CW RMS EVM at 8W EDGE output Peak EVM at 8W EDGE output 3rd Order IMD at 12W PEP (Two Tone) Signal Delay from Pin 1 to Pin 4 Deviation from Linear Phase (Peak to Peak) Thermal Resistance Stage 1 (Junction to Case) Thermal Resistance Stage 2 (Junction to Case) Unit MHz W dB dB dB % % % dBc nS Deg ºC/W ºC/W Min. 925 15 32 0.4 18 31 2.5 6.7 -35 2.5 0.5 11 4 Typ. Max. 960
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-102936 Rev B
Prelimi n ary XD010-14S-D4F 925-960 MHz 10W Amp
Pin Out Description
Pin # 1 2 3 4 Flange Functio n RF Input VDD1 VDD2 RF Output Gnd Description Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. This is the bias feed for the 1st stage of the amplifier module. This is the bias feed for the 2nd stage of the amplifier module. The gate bias is temperature compensated to maintain constant current over the operating temperature range. See Note 1. Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for optimum thermal and RF performance. See mounting instructions for recommendation.
Simplified Device Schematic
2
Vdd1
3
Vdd2
Temperature Compensation Bias Network
RF in
1
Q1
Q2
RF out
4
Case Flange = Ground
Absolute Maximum Ratings
Parameters 1st Stage Bias Voltage (VDD1 ) 2nd Stage Bias Voltage (VDD2) RF Input Power Load Impedance for Continuous Operation Without Damage Output Device Channel Temperature Lead Temperature During Solder Reflow Operating Temperature Range Storage Temperature Range Value 35 35 +2 0 5:1 +200 +210 -20 to +90 -40 to +100 Unit V V dBm VSWR ºC ºC ºC ºC
Note 1:
The internal generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be provided with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102936 Rev B
Prelimi n ary XD010-14S-D4F 925-960 MHz 10W Amp
Gain, Efficiency, EVM vs. Output Power Freq=950 MHz, Vdd=28 V, TFlange=25°C EDGE
35 30 Gain (dB), Efficiency (%) 25 20 15 10 5 0 0 2 4 6 Output Power (W) 8 10 12 Gain Efficiency EVM 7 6 5 4 3 2 1 0 RMS EVM (%) 35 30 25 20 15 10 5 0 0 2 4 6 Output Power (W) 8 10 12 Gain @ 24 VDC Gain @ 28 VDC Gain @ 32 VDC EVM @ 24 VDC EVM @ 28 VDC EVM @ 32 VDC
Gain and EVM vs. Output Power and Voltage Freq=942 MHz EDGE, Vdd=24V, 28V, 32V TFlange= 25°C
Gain (dB), EVM (%)
Gain and Efficiency vs. Output Power and Temperature Freq=950 MHz EDGE, Vdd=28 V, TFlange=-20°C, 25°C, 90°C
40 35 Gain (dB), Efficiency (%) 30 25 20 Gain @ -20°C 15 10 5 0 0 2 4 6 Output Power (W) 8 10 12 Gain @25°C Gain @ 90°C Efficiency @ -20°C Efficiency @ 25°C Efficiency @ 90°C 0 920 925 35 30 Gain (dB), Efficiency (%), EVM (%) 25
Gain, Efficiency, EVM vs. Frequency Output Power= 8 W EDGE, Vdd=28 V TFlange=25°C
0 -5 Input Return Loss (dB) -10
Gain Efficiency EV M Input Return Loss -15 -20 -25 -30 -35 965
20 15 10 5
930
935
940
945
950
955
960
Output Power (W)
EVM and Id vs. Output Power and Temperature Freq=950 MHz EDGE, Vdd=28 V, TFlange=-20°C, 25°C, 90°C
6 5 4 EVM (%) 3 2 1 0 0 2 4 6 Output Power (W) 8 10 12 EVM @-20°C EVM @ 25°C EVM @ 90°C Id @ -20°C Id @ 25°C Id @ 90°C 1.4 1.2 1 0.8 0.6 0.4 0.2 Id (Amps)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-102936 Rev B
|
|
