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Details, datasheet, quote on part number:XD010-22S
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Datasheet text preview:
Preliminary
Product Description
The XD010-22S-D2F 10W power module is a 2stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. The unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure consistant performance over temperature.
XD010-22S-D2F
1805-1880 MHz Class A/AB 10W Power Amplifier Module
Product Features
Functional Block Diagram
S ta g e 1 S ta g e 2
T e m p e ra tu re Compensation
T e m p e r a tu r e Compensation
· · · · · · ·
5
50 W RF impedance 12W Output P1dB Single Voltage Operation High Gain: 30 dB Typical High Efficiency Advanced, XeMOS II LDMOS FETS Temperature Compensation
1
2
3
4
Applications
R F in
2 8 VD C
C a s e Flange = Ground
2 8 VDC
R F out
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Base Station PA driver Repeater GSM / EDGE
Key Specifications
P a ra me te r Frequency P1dB Gain Gain Flatness IRL Efficiency Linearity Delay Phase Linearity RTH, j-l RTH, j-2 Description: Test Conditions Zin = Zout = 50, VDD = 28.0V, IDD1 = 230mA, IDD2 = 115mA, TFlange = 25ºC Frequency of Operation Output Power at 1dB Compression (single tone) Gain at 5W Output Power (CW) Peak to Peak Gain Variation Input Return Loss 5W Output (CW) Drain Efficiency at 10W CW RMS EVM at 5W EDGE output Peak EVM at 5W EDGE output 3rd Order IMD at 10W PEP (Two Tone; 1MHz F) Electrical Delay Deviation from Linear Phase (Peak to Peak) Thermal Resistance Stage 1 (Junction to Case) Thermal Resistance Stage 2 (Junction to Case) Unit MHz W dB dB dB % % % dBc nS Deg ºC/W ºC/W Min. 1805 12 30 0.5 14 25 1.5 5 -32 2.5 0.5 11 4 Typ. Max. 1880
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-102930 Rev B
Preliminary XD010-22S-D2F 1805-1880 MHz 10W
Pin Out Description
Pin # 1 2 3,4 5 Flange Functio n RF Input VDD1 VDD2 RF Output Gnd Description Module RF input. Care must be taken to protect against video transients that may damage the active devices. This is the bias feed for the 1st stage of the amplifier module. The gate bias is temperature compensated to maintain constant current over the operating temperature range. See Note 1. This is the bias feed for the 2nd stage of the amplifier module. The gate bias is temperature compensated to maintain constant current over the operating temperature range. See Note 1. Module RF output. Care must be taken to protect against video transients that may damage the active devices. Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for optimum thermal and RF performance. See mounting instructions for recommendation.
Simplified Device Schematic
2 Vdd1
3
4 Vdd2
Temperature Compensation Temperature Compensation
RF in 1
Q1
Q2
RF out 5
Case Flange = Ground
Absolute Maximum Ratings
Parameters 1st Stage Bias Voltage (VDD1 ) 2nd Stage Bias Voltage (VDD2) RF Input Power Load Impedance for Continuous Operation Without Damage Output Device Channel Temperature Lead Temperature During Solder Reflow Operating Temperature Range Storage Temperature Range Value 35 35 +2 0 5:1 200 +210 -20 to +90 -40 to +100 Unit V V dBm VSWR ºC ºC ºC ºC
Note 1:
The internal generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be provided with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102930 Rev B
Preliminary XD010-22S-D2F 1805-1880 MHz 10W
Gain, Efficiency, EVM vs. Output Power Freq=1840 MHz, Vdd=28 V, TFlange= 25°C
35 Gain (dB), Efficiency (%), EVM (%) 30 25 20 15 10 5 0 0 1 2 3 4 Output Power (W) 5 6 7 8 4.5 4 3.5 Gain EVM (%) Efficiency EVM 3 2.5 2 1.5 1 0.5 0 0 1 2 3 Output Power (W) 4 5 6 EVM @-20°C EVM @ 25°C EVM @ 90°C Id @-20°C Id @ 25°C Id @ 90°C
EVM, Id vs. Output Power and Temperature Freq=1840 MHz, Vdd=28 V, TFlange=-20°C, 25°C, 90°C
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 Id (Amps)
Gain, Efficiency, EVM vs. Frequency Freq=1840 MHz, Vdd=28 V, TFlange= 25°C
35 Gain (dB), Efficiency (%), EVM (%) 30 25 20 15 Gain 10 5 0 1790 Efficiency EVM 35 30 25 20 15 10 5 0 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 0
Gain, EVM vs. Output Power and Voltage Freq=1840 MHz, Vdd=24 V, 28 V, 32 V, TFlange= 25°C
Gain (dB), EVM (%)
Gain @ 24VDC Gain @ 28VDC Gain @ 32VDC EVM @ 24VDC EVM @ 28VDC EVM @ 32VDC
2
4
6 Output Power (W)
8
10
12
Frequency (MHz)
Gain, Efficiency vs. Output Power and Temperature Freq=1840 MHz, Vdd=28 V, TFlange=-20°C, 25°C, 90°C
35 30 Gain (dB), Efficiency (%) 25
Two Tone IMD vs. Output Power and Temperature Freq=1840 MHz, Vdd=28 V, TFlange=-20°C, 25°C, 90°C
0 -5 -10 -15 IMD (dBc) IMD @-20°C IMD @ 25°C IMD @ 90°C
20 15 10 5 0 0 1 2 3 4 Output Power (W) 5 6 7 8
-20 -25 -30 -35 -40 -45 0 1
Gain @-20°C Gain @ 25°C Gain @ 90°C Efficiency @-20°C Efficiency @ 25°C Efficiency @ 90°C
2
3 Output Power (W)
4
5
6
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-102930 Rev B
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