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Part: 2N6661
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Enhancement Mode MOSFET (includes Low Threshold MOSFET)
Company: Supertex, Inc.
Datasheet: Download 2N6661 datasheet File size : 94 kB
Request For quote: Find where to buy 2N6661
Datasheet text preview:
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 60V 90V RDS(ON) (max) 3.0 4.0 I D(ON) (min) 1.5A 1.5A Order Number / Package TO-39 2N6660 2N6661
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Package Option Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
DGS
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
01/06/03
TO-39
BVDSS BVDGS ± 20V
Case: DRAIN
-55°C to +150°C 300°C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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2N6660/2N6661
Thermal Characteristics
Package 2N6660 2N6661 ID (continuous)* 410mA 350mA ID (pulsed) 3A 3A Power Dissipation @ TC = 25°C 6.25W 6.25W
jc
ja
IDR* 410mA 350mA
I DRM 3.0A 3.0A
°C/W
20 20
°C/W
125 125
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current 2N6660 2N6661 Min 60 90 0.8 -3.8 2.0 -5.5 100 10 500 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance All 2N6660 2N6661 GFS CISS COSS CRSS t(ON) t(OFF) VSD trr Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop Reverse Recovery Time 1.2 350 170 50 40 10 10 10 ns V ns VDD = 25V, ID = 1A, RGEN = 25 VGS = 0V, ISD = 1A VGS = 0V, ISD = 1A pF VGS = 0V, VDS = 24V f = 1 MHz 1.5 5.0 3.0 4.0 m A V mV/°C nA µA Typ Max Unit V Conditions VGS = 0V, ID = 10µA VGS = VDS, ID =1mA VGS = VDS, ID =1mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating, TA = 125°C VGS = 10V, VDS = 10V VGS= 5V, ID = 0.3A VGS = 10V, ID = 1A VGS = 10V, ID = 1A VDS = 25V, ID = 0.5A
Notes: 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2: All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VD D
10%
10%
INPUT
OUTPUT
0V
90%
90%
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 · FAX: (408) 222-4895 www.supertex.com
VDD
RL OUTPUT
D.U.T.
01/06/03
Others parts begin by 2n
2N-1 2N-2 2N-3 2N-4 2N-5 2N-6 2N-7 2N-8 2N-9 2N-10 2N-11 2N-12 2N-13 2N-14 2N-15 2N-16 2N-17 2N-18 2N-19 2N-20 2N-21 2N-22 2N-23 2N-24 2N-25 2N-26 2N-27 2N-28 2N-29 2N-30 2N-31
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