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Part: 2N7007
Category:
Description:
Company: Supertex, Inc.
Datasheet: Download 2N7007 datasheet File size : 59 kB
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Datasheet text preview:
O N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BVDSS / BVDGS 240V RDS(ON) (max) 45 I D(ON) (min) 150mA Order Number / Package TO-92 2N7007
LETE BSO
2N7007
7
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
Note 1: See Package Outline section for dimensions.
BVDSS BVDGS ±30V -55°C to +150°C 300°C
SGD
TO-92
7-13
2N7007
Thermal Characteristics
Package TO-92 ID (continuous)* 65mA ID (pulsed) 260mA Power Dissipation @ TC = 25°C 1W
j c °C/W
125
j a °C/W
170
IDR* 65mA
IDRM 260mA
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current Min 240 1 2.5 10 100 1 ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD ON-State Drain Current 50 150 Static Drain-to-Source ON-State Resistance 45 45 Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop 30 30 15 10 30 20 1.2 V ns pF VGS = 0V, VDS = 25V f = 1 MHz VDD = 60V, ID = 50 mA, RGEN = 25 ISD = 65mA, VGS = 0V m mA Typ Max Unit V V nA nA µA Conditions ID = 100µA, VGS = 0V VGS = VDS, ID = 250µA VGS = ±20V, VDS = 0V VGS = 0V, VDS = 120V VGS = 0V, VDS = 120V TA = 125°C VGS = 4.5V, VDS = 20V VGS = 10V, VDS = 20V VGS = 4.5V, ID = 20mA VGS = 10V, ID = 50mA VDS = 10V, ID = 50mA
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
LETE OBSO
7-14
RL OUTPUT
D.U.T.
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