Details, datasheet, quote on part number: TC6320
PartTC6320
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Arrays->N and P-Channel
TitleArrays->N and P-Channel
DescriptionEnhancement Mode MOSFET Array (includes Low Threshold MOSFET)
CompanySupertex, Inc.
DatasheetDownload TC6320 datasheet
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Features, Applications

Features

Integrated gate-source resistor Integrated gate-source zener diode Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage

The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET an SO-8 package. Both MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. TC6320TG, a complementary high-speed, high voltage, gate-clamped N- and P-channel MOSFET pair in a single SO-8 package. The TC6320TG offers 200V breakdown voltage, 2.0A output peak current and low input capacitance. The 2.0A output current capability will minimize rise and fall times. The low input capacitance will minimize propagation delay times and also rise and fall times. The MOSFETs have integrated gate-source resistors and gate-source zener diode clamps that are desired for high voltage pulser applications saving board space and improving performance. It is specifically designed for applications in medical ultrasound transmitters and nondestructive evaluation in materials flaw detection, but it can also be used as an efficient buffer.

Application

High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interfaces

Drain-to-Source Voltage Drain-to-Gate Voltage Operating and Storage Temperature Soldering Temperature*

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

BVDSS / BVDGS N-Channel P-Channel 200V -200V RDS(ON) (max) N-Channel P-Channel 7.0 8.0 Order Number / Package SO-8 TC6320TG

N-Channel Electrical Characteristics (at TA=25C unless otherwise specified)

Symbol BVDSS VGS(th) RGS VzGS IDSS ID(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate-Source Shunt Resistor Change in RGS with Temperature Gate-Source Zener Voltage Change in VzGS with Temperature Zero Gate Voltage Drain Current On-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min Typ Max -4.5 50 TBD 25 TBD 10 1.0 Units V mV/C K %/C V mV/C mA A %/C mmho pF ns Conditions VGS=0V, ID=2mA VGS=VDS, ID=1mA VGS=VDS, IGS=2mA VGS=0V, VDS=Max Rating VGS=0V, VDS=0.8 Max Rating, VGS=0V, ISD=0.5A

Notes: 1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.) 2) All AC parameters sample tested.

10V Input 0V 10% t(ON) td(ON) VDD Output 10% tr t(OFF) td(OFF) tf 10% Input 90% Pulse Generator RGEN

P-Channel Electrical Characteristics (at TA=25C unless otherwise specified)

Symbol BVDSS VGS(th) RGS VzGS VGS(th) IDSS ID(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate-Source Shunt Resistor Change in RGS with Temperature Gate-Source Zener Voltage Change in VzGS with Temperature Zero Gate Voltage Drain Current On-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min Typ Max 4.5 50 TBD 25 TBD -10 -1.0 Units V mV/C K %/C V mV/C mA A %/C mmho pF ns Conditions VGS=0V, ID=-2mA VGS=VDS, ID=-1mA VGS=VDS, IGS=-2mA VGS=0V, VDS=Max Rating VGS=0V, VDS=0.8 Max Rating, VGS=0V, ISD=-0.5A

0V Input -10V 90% t(ON) td(ON) 0V Output VDD 90% 10% t(OFF) td(OFF) RL 10% VDD tf Input OUTPUT 10% Pulse Generator RGEN D.U.T


 

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