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Details, datasheet, quote on part number:TP0104N3
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Datasheet text preview:
TP0102 TP0104 E TP0104 BSOLET O Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -20V -40V * Same as SOT-89.
RDS(ON) (max) 4.0 4.0
VGS(th) (max) -2.4V -2.4V
I D(ON) (min) -0.85A -0.85A
Order Number / Package TO-39 -- TP0104N2 TO-92 TP0102N3 TP0104N3 TO-243AA* -- TP0104N8 Die TP0102ND TP0104ND
7
Product supplied on 2000 piece carrier tape reels. MIL visual screening available
Features
Low threshold -- 2.4V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces ideal for TTL and CMOS Solid state relays Battery operated systems
Package Options
D
Photo voltaic drives Analog switches General purpose line drivers Telecom switches
G D S
TO-243AA (SOT-89)
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds. 7-107 BVDSS BVDGS ± 20V -55°C to +150°C 300°C
Note: See Package Outline section for dimensions.
DGS SGD
TO-39 Case: DRAIN
TO-92
TP0102/TP0104
Thermal Characteristics
Package TO-39 TO-92 TO-243AA ID (continuous)* -0.9A -0.5A -0.26A ID (pulsed) -2.0A -2.0A -2.0A Power Dissipation @ TC = 25°C 3.5W 1.0W 1.6W
j c
j a
IDR* -0.90A -0.50A -0.26A
I DRM -2.0A -2.0A -2.0A
°C/W
35 125 15
°C/W
125 170 78
* ID (continuous) is limited by max rated Tj.
TP0104 E Electrical Characteristics (@ 25°C unless otherwise specified) BSOLET O
T = 25°C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate. A D
Symbol BVDSS VGS(th)
Parameter
Min
Typ
Max
Unit V
Conditions
Drain-to-Source Breakdown Voltage Gate Threshold Voltage
TP0104 TP0102
-40 -20 -1.0 -5.8 -1.0 -2.4 -6.5 -100 -10 -1
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -3V, VDS = -20V VGS = -5V, VDS = -20V VGS = -10V, VDS = -20V VGS = -3V, ID = -25mA
V mV/°C nA µA mA
V GS(th) IGSS IDSS
Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current
I D(ON)
ON-State Drain Current -0.25 -0.85
-0.08 -0.50 -1.70 15 4.7 2.5 0.55 225 250 60 50 25 4.0 7.0 3.0 4.0 -1.2 300 6.0 10 9.0 13 -2.0 V ns ns pF 7.5 4.0 1.0 %/°C m A
R DS(ON)
Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time
VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.5A VDS = -20V, ID = -0.5A VGS = 0V, VDS = -20V f = 1 MHz
RDS(ON) GFS CISS COSS CRSS td(ON) tr t d(OFF) tf VSD t rr
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE GENERATOR 90%
t(ON) Rgen
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
90% OUTPUT
VDD
90% 10%
10%
7-108
VDD = -20V, ID = -0.85A RGEN = 25 ISD = -0.25A, VGS = 0V ISD = -0.25A, VGS = 0V
D.U.T. OUTPUT RL
VDD
TP0102/TP0104
Typical Performance Curves
Output Characteristics
-2.5
TP0104 E T OBSOLE
-2.25 -1.75
Saturation Characteristics
-2.0 VGS = -10V
VGS = -10V
ID (amperes)
-8V -1.0 -6V -0.5 -4V
ID (amperes)
-1.5
-1.25 -8V -.75 -6V -.25 -4V
0 0 -10 -20 -30 -40 -50
0 0 -2 -4 -6 -8 -10
VDS (volts) Transconductance vs. Drain Current
0.5 5
VDS (volts) Power Dissipation vs. Case Temperature
7
0.4
VDS = -25V = -25V TA = -55°C
4
TO-39
3
GFS (siemens)
TA = 25°C
0.2
PD (watts)
0.3
2
TO-243AA TO-92
0.1
TA = 125°C
1
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10 1.0
TC (°C) Thermal Response Characteristics
TO-243AA
Thermal Resistance (normalized)
T O - 3 9 (pulsed) TO-243AA ( T A = 25°C)
TA = 25°C
0.8
PD = 1.6W
ID (amperes)
-1 T O - 3 9 (DC) T O - 9 2 (DC)
0.6
0.4
TO-39 PD = 3.5W TC = 25°C
-0.1
0.2
TO-92 P D = 1W T C = 25°C
0.01 0.1 1 10
-0.01 -0.1
0 -1 -10 -100 0.001
VDS (volts)
tp (seconds)
7-109
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