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Details, datasheet, quote on part number:TP0604N2
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| Part: | TP0604N2 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Arrays->P-Channel |
| Description: | Enhancement Mode MOSFET Array (includes Low Threshold MOSFET) |
| Company: | Supertex, Inc. |
| Datasheet: | Download TP0604N2 datasheet File size : 492 kB |
| Request For quote: | Find where to buy TP0604N2
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Datasheet text preview:
TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -40V RDS(ON) (max) 2.0 I D(ON) (min) -2.0A VGS(th) (max) -2.4V Order Number / Package TO-92 TP0604N3 SOW-20* TP0604WG
* Same as SO-20 with 300 mil wide body.
Features
Low threshold -- -2.4V max. High input impedance Low input capacitance -- 95pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
11/12/01
SGD
TO-92
BVDSS BVDGS ± 20V
SOW-20
-55°C to +150°C 300°C
Note 1: Note 2: See Package Outline section for dimensions. See Array section for quad pinouts.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TP0604
Thermal Characteristics
Package TO-92 SOW-20 ID (continuous)* -0.43A ID (pulsed) -4.2A Power Dissipation @ TC = 25°C 1W
j c
j a
IDR* -0.43A
I DRM -4.2A
°C/W
125
°C/W
170
Refer to Enhancement Mode MOSFET Arrays Section
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -40 -1.0 -3.0 -2.4 -4.5 -100 -10 -1.0 I D(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD t rr ON-State Drain Current -0.4 -2.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.4 -0.6 -3.3 2.0 1.5 0.75 0.6 95 85 35 5.0 7.0 10 6.0 -1.3 300 150 120 60 8 18 15 19 -2.0 V ns VGS = 0V, ISD = -1.5A VGS = 0V, ISD = -1.5A ns VDD = -20V ID = -1.0A RGEN = 25 pF VGS = 0V, VDS = -20V f = 1 MHz 3.5 2.0 1.2 %/°C Typ Max Unit V V mV/°C nA µA mA Conditions VGS = 0V, ID = -2.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -20V VGS = -10V, VDS = -20V VGS = -5V, ID = -250mA VGS = -10V, ID = -1.0A VGS = -10V, ID = -1.0A VDS = -20V, ID = -1.0A
A
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE GENERATOR 90%
t(ON) Rgen
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
90% OUTPUT
VD D
90% 10%
10%
2
D.U.T. OUTPUT RL
VDD
TP0604
Typical Performance Curves
-5 -4
Output Characteristics
-5 -4
Saturation Characteristics
ID (amperes)
-3 -2 -1 0
ID (amperes)
VGS = -10V -9V -8V -7V -6V -5V -4V
-3 -2 -1 0
VGS = -10V -9V -8V -7V -6V -5V -4V 0 -2 -4 -6 VDS (volts) -8 -10
0
-10
-20 -30 VDS (volts)
-40
-50
1.0 0.8
Transconductance vs. Drain Current
VDS = -25V T A = -55°C T A = 25°C T A = 150°C
2.0
Power Dissipation vs. Case Temperature
GFS (siemens)
PD (watts)
0.6 0.4 0.2 0
1.0
TO-92
0
-1 -2 ID (amperes)
-3
0
0
25
50
TC (°C)
75
100
125
150
-10
Maximum Rated Safe Operating Area Thermal Resistance (normalized)
1.0 0.8 0.6 0.4 0.2 0 0.001
Thermal Response Characteristics
ID (amperes)
-1.0 TO-92 (DC) -0.1
TC= 25°C -0.01 -0.1
TO-92 PD = 1W TC = 25°C
0.01
-1
VDS (volts)
-10
-100
tp (seconds)
0.1
1
10
3
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