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Details, datasheet, quote on part number:VN0106N6
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| Part: | VN0106N6 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Enhancement Mode MOSFET (includes Low Threshold MOSFET) |
| Company: | Supertex, Inc. |
| Datasheet: | Download VN0106N6 datasheet File size : 488 kB |
| Request For quote: | Find where to buy VN0106N6
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Datasheet text preview:
VN0104 VN0106 N-Channel Enhancement-Mode Vertical DMOS FET
Ordering Information
BVDSS / BVDGS 40V 60V RDS(ON) (max) 3.0 3.0 I D(ON) (min) 2.0A 2.0A Order Number / Package TO-92 VN0104N3 VN0106N3
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C
See Package Outline section for dimensions.
SGD
TO-92
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN0104/VN0106
Thermal Characteristics
Package TO-92 ID (continuous)* 350mA ID (pulsed) 2.0A Power Dissipation @ TC = 25°C 1.0W
jc °C/W
125
ja °C/W
170
IDR* 350mA
I DRM 2.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage VN0106 VN0104 VGS(th) V GS(th) IGSS IDSS Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 60 V 40 0.8 -3.8 2.4 -5.5 100 1 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 0.5 2.0 1.0 2.5 3.0 2.5 0.70 450 55 20 5 3 5 6 5 1.2 400 65 25 8 5 8 9 8 1.8 V ns ns VDD = 25V ID = 1A RGEN = 25 VGS = 0V, ISD =1.0A VGS = 0V, ISD =1.0A pF 5.0 3.0 1 %/°C m µA V mV/°C nA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 250mA VGS = 10V, ID = 1A VGS = 10V, ID = 1A VDS = 25V, ID = 0.5A VGS = 0V, VDS = 25V f = 1 MHz VGS = 0V, ID = 1mA Typ Max Unit Conditions
A
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VD D
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
RL OUTPUT
D.U.T.
VN0104/VN0106
Typical Performance Curves
2.5 2.0
Output Characteristics
VGS =10V 8V
2.5 2.0
Saturation Characteristics
VGS = 10V 8V
ID (amperes)
ID (amperes)
1.5 1.0 0.5 0
6V
1.5 1.0 0.5 0
6V
4V
4V
0
10
20 30 VDS (volts)
40
50
0
2
VDS (volts)
4
6
8
10
1.0 0.8
Transconductance vs. Drain Current
VDS = 25V TA = -55°C 25°C 125°C
2.0
Power Dissipation vs. Case Temperature
GFS (siemens)
PD (watts)
0.6 0.4 0.2 0
1.0
TO-92
0
0.2
ID (amperes)
0.4
0.6
0.8
1.0
0
0
25
50
TC (°C)
75
100
125
150
10
Maximum Rated Safe Operating Area
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8 0.6 0.4 0.2 0 0.001
ID (amperes)
1.0 TO-92 (DC) 0.1
0.01
TC = 25°C 0.1 1.0
TO-92 PD = 1W TC = 25°C
0.01
VDS (volts)
10
100
tp (seconds)
0.1
1
10
3
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