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Details, datasheet, quote on part number:VN0109N9
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Datasheet text preview:
VN0109 E BSOLET O
N-Channel Enhancement-Mode Vertical DMOS FET
Ordering Information
BVDSS / RDS(ON) ID(ON) BVDGS (max) (min) 40V 60V 90V 3.0 3.0 3.0 2.0A 2.0A 2.0A Order Number / Package TO-39 -- -- VN0109N2 TO-52 -- -- VN0109N9 TO-92 VN0104N3 VN0106N3 VN0109N3 TO-220 -- -- VN0109N5 Quad P-DIP** VN0104N6 VN0106N6 --
VN0104 VN0106 VN0109
Quad C-DIP* -- VN0106N7 --
Die VN0104ND VN0106ND VN0109ND
7
* 14 pin side brazed ceramic DIP
**14 pin plastic DIP MIL visual screening available
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Package Options
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
G DS DGS DGS
TO-39 Case: DRAIN
TO-52 Case: DRAIN
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C 7-151
SGD
TO-220 TAB: DRAIN
TO-92
Note 1: See Package Outline section for dimensions. Note 2: See Array section for quad pinout.
14-Lead DIP
VN0104/VN0106/VN0109
Thermal Characteristics
Package TO-39 TO-52 TO-92 TO-220 Plastic DIP Ceramic DIP ID (continuous)* 0.8A 0.5A 0.5A 1.5A ID (pulsed) 2.5A 2.0A 2.0A 2.5A Power Dissipation @ TC = 25°C 3.5W 1.0W 1.0W 15.0W
jc °C/W
35 125 125 8
ja °C/W
125 170 170 70
IDR* 0.8A 0.5A 0.5A 1.5A
IDRM 2.5A 2.0A 2.0A 2.5A
VN0109 E T OBSOLE Electrical Characteristics (@ 25°C unless otherwise specified)
See DMOS Arrays & Special Functions section
* ID (continuous) is limited by max rated Tj.
Symbol BVDSS
Parameter Drain-to-Source Breakdown Voltage VN0109 VN0106 VN0104
Min 90 60 40 0.8
Typ
Max
Unit V
Conditions VGS = 0V, ID = 1mA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 250mA VGS = 10V, ID = 1A VGS = 10V, ID = 1A VDS = 25V, ID = 0.5A VGS = 0V, VDS = 25V f = 1 MHz
VGS(th) V GS(th) IGSS IDSS
Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current
2.4 -3.8 -5.5 100 1 100
V mV/°C nA µA
ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr
ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time
0.5 2.0
1.0 2.5 3.0 2.5 0.70 5.0 3.0 1 65 25 8 5 8 9 8 1.8
A
%/°C m
300
450 55 20 5 3 5 6 5 1.2 400
pF
ns
V ns
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-152
VDD = 25V ID = 1A RGEN = 25 VGS = 0V, ISD =1.0A VGS = 0V, ISD =1.0A
VDD
RL OUTPUT
D.U.T.
VN0104/VN0106/VN0109
Typical Performance Curves
Output Characteristics
2.5 VGS =10V 8V
VN0109 E T OBSOLE
2.5 2.0
Saturation Characteristics
VGS = 10V 2.0
8V
ID (amperes)
ID (amperes)
1.5 6V 1.0
1.5
6V
1.0
0.5
4V
0.5
4V
0 0 10 20 30 40 50
0 0 2 4 6 8 10
7
VDS (volts) Transconductance vs. Drain Current
1.0 25
VDS (volts) Power Dissipation vs. Case Temperature
0.8
VDS = 25V
20
GFS (siemens)
25°C
0.4
PD (watts)
0.6
TA = -55°C
15
TO-220
125°C
10
0.2
5
TO-39 TO-92/TO-52
0 0 0.2 0.4 0.6 0.8 1.0
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
10 1.0 T O - 3 9 (pulsed) T O - 2 2 0 (DC)
TC (°C) Thermal Response Characteristics
TO-220 PD = 15W TC = 25°C
Thermal Resistance (normalized)
0.8
ID (amperes)
1.0
T O - 3 9 (DC) T O - 5 2 / T O - 9 2 (DC)
0.6
TO-39 PD = 3.5W TC = 25°C
0.4
0.1
0.2
TC = 25°C 0.01 0.1 1.0 10 100 0 0.001 0.01 0.1
TO-92 P D = 1W T C = 25°C
1 10
VDS (volts)
tp (seconds)
7-153
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