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Details, datasheet, quote on part number:VN0120
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Datasheet text preview:
ETE VN0120 OBSOL
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
Standard Commercial Devices
BVDSS / BVDGS 200V RDS(ON) (max) 10 I D(ON) (min) 0.4A Order Number / Package TO-39 VN0120N2 TO-92 VN0120N3 Die VN0120ND
MIL visual screening available
7
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Package Options
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-155 BVDSS BVDGS ± 20V -55°C to +150°C 300°C
D
G
S SGD
TO-39 Case: DRAIN
TO-92
Note: See Package Outline section for dimensions.
VN0120
Thermal Characteristics
Package TO-39 TO-92 ID (continuous)* 350mA 250mA ID (pulsed) 1.0A 0.9A Power Dissipation @ TC = 25°C 3.5W 1.0W
jc
ja
IDR* 350mA 250mA
IDRM 1.0A 0.9A
°C/W
35 125
°C/W
125 170
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 200 1 -5.1 3 -6.0 100 10 1 I D(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr t d(OFF) tf VSD t rr ON-State Drain Current 0.3 0.4 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 100 45 20 5 3 5 6 5 1.2 400 55 30 8 5 8 9 8 1.8 V ns ns pF 0.6 0.9 10 8.0 1.0 15 10 1.2 %/°C m Typ Max Unit V V mV/°C nA µA mA
LETE OBSO
Conditions VGS = 0V, ID = 1mA VGS = VDS , ID = 1mA VGS = VDS , ID = 1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 100mA VGS = 10V, ID = 100mA VGS = 10V, ID = 100mA VDS = 25V, ID = 250mA VGS = 0V, VDS = 25V f = 1 MHz
A
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
7-156
VDD = 25V, ID = 1A, RGEN = 25 VGS = 0V, ISD = 1.0A VGS = 0V, ISD = 1.0A
VDD
RL OUTPUT
D.U.T.
VN0120
Typical Performance Curves
Output Characteristics
2.0
LETE OBSO
1.0 0.8
Saturation Characteristics
1.6
VGS = 10V
ID (amperes)
1.2
VGS = 10V 8V 6V
ID (amperes)
0.6
8V 6V
0.8
0.4
4V
0.4
4V
0.2 2V
2V 0 0 10 20 30 40 50 0 0 2 4 6 8 10
7
VDS (volts) Transconductance vs. Drain Current
1.0 VDS= 25V 0.8 150°C 0.6 TA= -55°C 25°C 20 25
VDS (volts) Power Dissipation vs. Case Temperature
GFS (siemens)
PD (watts)
15
0.4
10
0.2
5
TO-39 TO-92
0 0 0.2 0.4 0.6 0.8 1.0
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
1.0 1.0
TC (°C) Thermal Response Characteristics
Thermal Resistance (normalized)
T O - 3 9 (pulsed)
0.8
TO-39 P D = 3.5W T C = 25°C
TO -3
0.1
9
ID (amperes)
TO -9 2 (D C )
(D C )
0.6
0.4
0.01
0.2
TO-92 P D = 1W T C = 25°C
0.01 0.1 1 10
TC= 25°C 0.001 1 10 100 1000 0 0.001
VDS (volts)
tP (seconds)
7-157
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