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Part: VN3205N6
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Enhancement Mode MOSFET (includes Low Threshold MOSFET)
Company: Supertex, Inc.
Datasheet: Download VN3205N6 datasheet File size : 105 kB
Request For quote: Find where to buy VN3205N6
Datasheet text preview:
VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 50V
RDS(ON) (max) 0.3
VGS(th) (max) 2.4V TO-92 VN3205N3
Order Number / Package 14-Pin P-DIP VN3205N6 TO-243AA* VN3205N8 Die VN3205ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels. MIL visual screening available
Product marking for TO-243AA:
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
VN2L
Where = 2-week alpha date code
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Package Options
D1 G1 S1 NC S2 G2 D2
1 2 3 4 5 6 7 14 13 12 11 10 9 8
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) D4 G4 S4 NC S3 G3 D3
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
top view
BVDSS BVDGS ± 20V
14-pin DIP
G D S SGD
D
-55°C to +150°C 300°C
TO-92
TO-243AA (SOT-89)
Note: See Package Outline section for dimensions.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VN3205
Thermal Characteristics
Package TO-92 SOT-89 Plastic DIP *
ID (continuous)* 1.2A 1.5A 1.5A
ID (pulsed) 8.0A 8.0A 8.0A
Power Dissipation @ TC = 25°C 1.0W 1.6W (TA = 25°C) 3.0W
jc °C/W
125 15 41.6
j a °C/W
170 78
IDR* 1.2A 1.5A 1.5A
I DRM 8.0A 8.0A 8.0A
83.3
ID (continuous) is limited by max rated Tj. TA = 25°C. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Total for package.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 50 0.8 -4.3 1 2.4 -5.5 100 10 1 I D(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance TO-92 and P-DIP SOT-89 TO-92 and P-DIP SOT-89 RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD t rr Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 1.0 0.85 1.5 220 70 20 300 120 30 10 15 25 25 1.6 V ns VGS = 0V, ISD = 1.5A VGS = 0V, ISD = 1A ns VDD = 25V ID = 2A RGEN = 10 pF VGS = 0V, VDS = 25V f = 1 MHz 3.0 14 0.45 0.45 0.3 0.3 1.2 Typ Max Unit V V mV/°C nA µA mA A %/°C Conditions VGS = 0V, ID = 10mA VGS = VDS, ID = 10mA VGS = VDS, ID = 10mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 10V, VDS = 5V VGS = 4.5V, ID = 1.5A VGS = 4.5V, ID = 0.75A VGS = 10V, ID = 3A VGS = 10V, ID = 1.5A VGS = 10V, ID = 3A VDS = 25V, ID = 2A
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
10V
90% INPUT
0V
PULSE GENERATOR
Rgen
10%
t(ON)
t(OFF) tr td(OFF) tF
td(ON)
VDD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
RL OUTPUT
D.U.T.
VN3205
Typical Performance Curves
Output Characteristics
20 20
Saturation Characteristics
VGS =
16
10V
VGS =
16
10V
ID (amperes)
ID (amperes)
12
8V
12
8V
8
6V
8
6V
4
4
4V 3V
0 0 10 20 30 40 50 0 0 2 4 6 8 10
4V 3V
VDS (volts) Transconductance vs. Drain Current
5 2.0
VDS (volts) Power Dissipation vs. Temperature
4
VDS = 25V
1.6
T O - 2 4 3 A A (T A = 25°C) P-DIP
GFS (siemens)
TA = -55°C
2
25°C 125°C
PD (watts)
3
1.2
0.8
TO-92
1
0.4
0 0 2 4 6 8 10
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
10 T O - 9 2 (pulsed) P - D I P (pulsed) 1.0 TO-243AA (pulsed)
TC (°C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
ID (amperes)
1.0 T O - 2 4 3 A A (DC) T O - 9 2 (DC) P - D I P (DC) 0.1
TO-243AA
0.6
TA = 25°C PD = 1.6W
0.4
TC = 25°C
.01 0 1 10 100
0.2
TO-92 P D = 1W T C = 25°C
0.01 0.1 1.0 10
0 0.001
VDS (volts)
tp (seconds)
3
Others parts begin by vn
VN-1 VN-2 VN-3
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