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Part: VP0120N5
Category:
Description:
Company: Supertex, Inc.
Datasheet: Download VP0120N5 datasheet File size : 126 kB
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LETE VP0120 OBSO
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -200V
MIL visual screening available
RDS(ON) (max) 25
I D(ON) (min) -100mA
Order Number / Package TO-92 VP0120N3 Die VP0120ND
7
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
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Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-223 BVDSS BVDGS ± 20V -55°C to +150°C 300°C
SGD
TO-92
Note: See Package Outline section for dimensions.
VP0120
Thermal Characteristics
Package TO-92 ID (continuous)* -0.1A ID (pulsed) -0.35A Power Dissipation @ TC = 25°C 1.0W
j c
j a
IDR* -0.1A
I DRM -0.35A
°C/W
125
°C/W
170
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -200 -1.5 6.0 -100 -10 -1 I D(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr t d(OFF) tf VSD t rr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 50 -100 -350 -400 -750 25 15 0.6 70 50 10 5 4 4 4 4 -1.0 500 60 30 10 10 10 10 11 V ns ISD = -0.5A, VGS = 0V ISD = -0.5A, VGS = 0V ns VDD = -25V ID = -350mA RGEN = 25 pF 40 25 %/°C m -3.5 Typ Max Unit V V mV/°C nA µA mA mA Conditions ID = -1.0mA, VGS = 0V VGS = VDS, ID = -1.0mA ID = -1.0mA, VGS = VDS VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -50mA VGS = -10V, ID = -100mA VGS = -10V, ID = -100mA VDS = -25V, ID = -100mA VGS = 0V, VDS = -25V f = 1 MHz
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
LETE OBSO Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE GENERATOR 90%
t(ON) Rgen
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
90% OUTPUT
VDD
90% 10%
10%
7-224
D.U.T. OUTPUT RL
VDD
Typical Performance Curves
Output Characteristics
-1.0 VGS = -10V -8V -0.8
LETE OBSO
-0.5 -0.4 -8V
VP0120
Saturation Characteristics
VGS = -10V
ID (amperes)
-0.6
-6V
ID (amperes)
-0.3
-6V
-0.4
-0.2
-4V
-0.2
-4V
-0.1
0 0 -10 -20 -30 -40 -50
0 0 -2 -4 -6 -8 -10
VDS (volts) Transconductance vs. Drain Current
140 25
VDS (volts) Power Dissipation vs. Case Temperature
7
VDS = -25V
120 20
GFS (millisiemens)
9
PD (watts)
100
TA = -55°C
15
80
TA = 25°C
10
60
TA = 125°C
5 TO-92
40 0 -0.2 -0.4 -0.6 -0.8 -1.0
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10 1.0 T C = 25°C
TC (°C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
ID (amperes)
-1.0
0.6
0.4
-0.1 T O - 9 2 (DC)
0.2
TO-92 P D = 1W T C = 25°C
0.01 0.1 1 10
-0.01 0 -10 -100 -1000
0 0.001
VDS (volts)
tp (seconds)
7-225
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VP-1 VP-2 VP-3
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