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Details, datasheet, quote on part number:VP0340N2
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Datasheet text preview:
VP0340 SOLETE OB
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -350V -400V
MIL visual screening available
VP0335 VP0340
R DS(ON) (max) 6.0 6.0
ID(ON) (min) -1.5A -1.5A
Order Number / Package TO-3 -- VP0340N1 TO-220 VP0335N5 VP0340N5 Die VP0335ND VP0340ND
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High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
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Package Options
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
G S GD S
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-229 BVDSS BVDGS ± 20V -55°C to +150°C 300°C
TO-3 Case: DRAIN
TO-220 TAB: DRAIN
Note: See Package Outline section for dimensions.
VP0335/VP0340
Thermal Characteristics
Package TO-3 TO-220 ID (continuous)* -2.7A -1.6A ID (pulsed) -5.0A -5.0A Power Dissipation @ TC = 25°C 100W 50W
j c
j a
IDR* -2.7A -1.6A
I DRM -5.0A -5.0A
°C/W
1.25 2.5
°C/W
30 40
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VP0340 VP0335 Min -400 -350 -2.5 4.8 -4.5 6.0 -100 -200 -2.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -1.5 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.5 -1.0 -3.5 6.0 4.5 0.7 0.8 550 90 20 25 25 65 20 -1.0 500 700 120 50 40 40 110 40 -1.3 V ns ISD = -0.5A, VGS = 0V ISD = -0.5A, VGS = 0V ns VDD = -25V ID = -1A RGEN = 10 pF 6.0 1.2 %/°C Typ Max Unit V V mV/°C nA µA mA A Conditions VGS = 0V, ID = -10mA VGS = VDS, ID = -10mA ID = -10mA, VGS = VDS VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -250mA VGS = -10V, ID = -500mA VGS = -10V, ID = -500mA VDS = -25V, ID = -500mA VGS = 0V, VDS = -25V f = 1 MHz
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
VP0340 SOLETE OB
Rgen
10%
INPUT
-10V
PULSE GENERATOR 90%
t(ON)
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
90% OUTPUT
VDD
90% 10%
10%
7-230
D.U.T. OUTPUT RL
VDD
Typical Performance Curves
Output Characteristics
-5.0 VGS = -10V -4.0 -8V
VP0340 OLETE OBS
-2.0 -1.6
VP0335/VP0340
Saturation Characteristics
VGS = -10V -8V
ID (amperes)
ID (amperes)
-6V -1.2
-3.0
-2.0
-6V
-0.8
-1.0
-0.4 -4V -4V
0 0 -10 -20 -30 -40 -50
0 0 -2 -4 -6 -8 -10
VDS (volts) Transconductance vs. Drain Current
2.0 100 TO-3
VDS (volts) Power Dissipation vs. Case Temperature
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VDS = -25V
1.6 80
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TO-220
GFS (siemens)
0.8
TA= 25°C TA= 125°C
PD (watts)
1.2
TA= -55°C
60
40
0.4
20
0 0 -0.5 -1.0 -1.5 -2.0 -2.5
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10 T O - 2 2 0 (pulsed) T O - 3 (DC) 1.0
TC (°C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
TO-3 P D = 100W T C = 25°C
ID (amperes)
-1.0
T O - 2 2 0 (DC)
0.6
TO-220 P D = 50W
0.4
-0.1
T C = 25°C
0.2
-0.01 -1
T C = 25°C -10 -100 -1000
0 0.001 0.01 0.1 1 10
VDS (volts)
tp (seconds)
7-231
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