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Details, datasheet, quote on part number:VP0350N1
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Datasheet text preview:
Ordering Information
BVDSS / BVDGS -500V
LETE OBSO
P-Channel Enhancement-Mode Vertical DMOS FETs
Order Number / Package TO-3 VP0350N1 TO-220 VP0350N5 Die VP0350ND ID(ON) (min) -1A
VP0350
R DS(ON) (max) 7.5
MIL visual screening available
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Package Options
Applications
Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
G S GD S
Absolute Maximum Ratings
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
05/19/03
TO-3 Case: DRAIN
BVDSS BVDGS ± 20V
TO-220 TAB: DRAIN
-55°C to +150°C 300°C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
VP0350
Thermal Characteristics
Package TO-3 TO-220 ID (continuous)* -1.5A -1.0A ID (pulsed) -3.0A -3.0A Power Dissipation @ TC = 25°C 100W 50W
j c
j a
IDR* -1.5A -1.0A
IDRM -3.0A -3.0A
°C/W
1.25 2.5
°C/W
30 40
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -500 -2.5 4.8 -4.5 6.0 -100 -200 -2 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -1.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.25 -1.5 -3.0 6.0 5.5 0.7 0.45 720 110 20 11 11 70 22 -1.0 550 800 130 50 30 30 100 30 -1.3 V ns ns pF 7.5 1.2 %/°C Typ Max Unit V V mV/°C nA µA mA A
ETE OBSOL
Conditions VGS= 0V, ID =-10mA VGS = VDS, ID = -10mA VGS = VDS, ID = -10mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -0.25A VGS = -10V, ID = -0.25A VGS = -10V, ID = -0.25A VDS = -25V, ID = -0.5A VGS = 0V, VDS = -25V f = 1 MHz
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE GENERATOR 90%
t( O N ) Rgen
t( O F F ) tr td ( O F F ) tF
INPUT
td ( O N )
0V
90% OUTPUT
VDD
90% 10%
10%
2
VDD = -25V ID = -1A RGEN = 10 VGS = 0V, ISD = -0.25A VGS = 0V, ISD = -0.25A
D.U.T. OUTPUT RL
VDD
Typical Performance Curves
Output Characteristics
-5
ETE OBSOL
-2.0 -8V -1.6
VP0350
Saturation Characteristics
-4
VGS = -10V -7V
VGS = -10V
-8V -6V -5V
ID (amperes)
ID (amperes)
-3 -6V -2 -5V
-1.2
-0.8
-4V -1 -4V 0 0 -10 -20 -30 -40 -50 0 0 -2 -4 -6 -8 -10 -0.4
VDS (volts) Transconductance vs. Drain Current
1.0 100 TO-3 0.8
VDS (volts) Power Dissipation vs. Case Temperature
VDS = -25V
80
GFS (siemens)
PD (watts)
0.6
TA = -55°C TA = 25°C
60 TO-220
0.4
TA = 150°C
40
0.2
20
0 0 -0.5 -1.0 -1.5 -2.0 -2.5
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10 T O - 2 2 0 (pulsed) T O - 3 (DC) 1.0
TC (°C) Thermal Response Characteristics
TO-220 P D = 50W
0.8
Thermal Resistance (normalized)
T C = 25°C
ID (amperes)
-1 T O - 2 2 0 (DC)
0.6
TO-3 PD = 100W TC = 25°C
0.4
-0.1
0.2
T C = 25°C -0.01 -1 -10 -100 -1000 0 0.001 0.01 0.1 1 10
VDS (volts)
tp (seconds)
3
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